ISSN:
1432-0630
Keywords:
PACS: 81.05.
;
t
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Experimental investigations on the preparation, characterization, and properties of several bulk and thin-film ternary alloys based on the chalcopyrite II–IV–V2 semiconductors are presented. Rapid melt solidification in vacuum-sealed fused-silica tubes resulted in amorphous alloy formation in almost all compositions in the system CdGeAs2–CdSiAs2. ZnGeAs2–CdGeAs2 alloys showed very limited tendency toward amorphous phase formation. Phase separation, crystallization and electrical properties were studied for amorphous Cd–Ge–Si–As alloys by thermal analysis, transmission electron microscopy, X-ray diffraction, and Hall measurements. Rapid crystallization resulted in a reversal of conductivity type (p-to-n or vice versa). Crystallized glassy alloys showed room-temperature mobility of 64 cm2/V s, and a hole concentration of 1020 cm-3. The p-to-n change in conductivity type upon amorphous-to-crystal transformation suggests that these alloys can be used to fabricate p–n junction devices by surface crystallization of the amorphous phase.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01571686
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