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  • 1
    Digitale Medien
    Digitale Medien
    Structural and electronic properties of boron nitride thin films containing silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5046-5051 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368752
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  • 2
    Digitale Medien
    Digitale Medien
    Substitutional phosphorus doping of diamond by ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2566-2569 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm−2 and the implanted samples were annealed in vacuum to 1200 °C. From the channeling effects of the emitted β− particles measured for all principal axial directions we obtain a fraction of 70±10% of substitutional P, a vanishing fraction on tetrahedral interstitial sites and a 30% random fraction. Possible displacements of the P atoms from ideal substitutional sites must be below 0.2 Å. This demonstrates that P is a substitutional impurity in diamond and efficient substitutional P doping of diamond can be accomplished by a conventional implantation and annealing procedure if low implantation doses are chosen. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363919
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  • 3
    Digitale Medien
    Digitale Medien
    Lattice sites of arsenic ions implanted in diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0×1013 cm−2 73Se ions was implanted into IIa diamond at 300 K with an energy of 60 keV. 73Se (t12=7.1 h) decays to 73As (t1/2=80 d), which in turn decays to excited states in 73Ge. Channeling effects were measured on conversion electrons emitted in the 73Ge decay. Annealing studies in the range 873–1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359753
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  • 4
    Digitale Medien
    Digitale Medien
    Optical activation of Be implanted into GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1622-1624 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122225
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  • 5
    Digitale Medien
    Digitale Medien
    Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368355
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  • 6
    Digitale Medien
    Digitale Medien
    X-ray photoelectron diffraction from (3×3) and ((square root of)3×(square root of)3)R 30° (0001)Si 6H–SiC surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368879
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  • 7
    Digitale Medien
    Digitale Medien
    Lattice sites of ion implanted Li in diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2733-2735 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Radioactive Li ions were implanted into natural IIa diamonds at temperatures between 100 and 900 K. Emission channeling patterns of α-particles emitted in the nuclear decay of 8Li(t1/2=838 ms) were measured and, from a comparison with calculated emission channeling and blocking effects from Monte Carlo simulations, the lattice sites taken up by the Li ions were quantitatively determined. A fraction of 40(5)% of the implanted Li ions were found to be located on tetrahedral interstitial lattice sites, and 17(5)% on substitutional sites. The fractions of implanted Li on the two lattice sites showed no change with temperature, indicating that Li diffusion does not take place within the time window of our measurements. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113691
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  • 8
    Digitale Medien
    Digitale Medien
    Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 46-48 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350 °C show the IR absorption peak at 1080 cm−1, characteristic for c-BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c-BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c-BN is related to the ionicity of the BN bond. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115487
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  • 9
    Digitale Medien
    Digitale Medien
    Cleaning of AlN and GaN surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5248-5260 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures 〉850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368814
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  • 10
    Digitale Medien
    Digitale Medien
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050996
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