ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Optical activation of Be implanted into GaN (1998)

Ronning, C. ; Carlson, E. P. ; Thomson, D. B. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 1622-1624

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122225

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit