Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 7018-7021
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline β-SiC samples were implanted with 50 keV 15N ions with fluences ranging from 3×1017 to 1.5×1018 ions/cm2 at elevated temperature up to 1100 °C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 °C were reduced distinctly in comparison with the profiles implanted below 930 °C or annealed at 1100 °C. The redistribution of nitrogen implanted in SiC at 1100 °C was ascribed to the formation of β-Si3N4 crystallites in SiC, which was confirmed by x-ray diffraction at glancing incidence. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360470
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