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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the fundamental band-gap E0 of Cd1−xZnxTe alloys with zinc concentrations in the 0 to 0.3 range has been determined by modulated photoreflectance (PR). E0 is found to vary from 1.511 eV for x=0.00 to 1.667±0.008 eV for x=0.3, at room temperature and from 1.602 eV at x=0.00 to 1.762±0.004 eV for x=0.3 at 10 K. The measured broadening parameters Γ have values between 25 and 45 meV at room temperature and decrease monotonically to values around 5 meV or smaller at 10 K. The temperature dependence of the observed band gap energies is well described by the well known Varshni formula E(T)=E(0)−AT2/(T+aitch-theta) for all samples studied. The PR temperature broadening is well understood assuming that it results from the scattering of the excitonic electron-hole pair responsible of the band-to-band transition PR signal off LO phonons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 441-443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractive indices n and absorption coefficients α of epitaxial metastable zincblende structure β-GaN(001) were determined over the subband-gap energy range between 0.8–3.1 eV from an analysis of optical transmission spectra. n was found to vary from 2.25 to 0.8 eV (1.55 μm) to 2.50 at 3.1 eV (0.4 μm) with an energy E (eV) dependence that is well described by a Sellmeir-type dispersion relationship, n2(E)=1+148/(38.3−E2). The refractive indices of β-GaN are 3%–4% smaller than previously reported values for hexagonal α-GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 94-96 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on excitonic transitions observed at room temperature in multilayers of (GaAs)1−x(Ge2)x/GaAs grown by magnetron sputtering. We attribute the observation of the exciton absorption at room temperature to confinement effects on the bound electron–hole pairs inside the Ge-rich layers of the (GaAs)1−x(Ge2)x alloys. From secondary ions mass spectroscopy these layers are measured to be 50, 33, and 30 nm in full width at half maximum (FWHM), for three different samples. These layers alternate with (GaAs)1−x(Ge2)x alloy layers of very low Ge concentration that can be considered of plain GaAs, ∼360 nm in thickness for two samples and 240 nm for a third one. The observed transition energies of the exciton are very close to (approximate)1 eV both at 300 and 4 K. A calculation of exciton energy-level spacing and transition probabilities provides acceptable values for the exciton transition energies observed, considering a triangular quantum well as an approximation to the Ge profile in the confinement layers. The observed excitonic FWHM remain nearly constant at all temperatures examined (300–4 K). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Histopathology 33 (1998), S. 0 
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: The Klebsiella pneumoniae nitrogen regulatory protein NTRC is a response regulator which activates transcription in response to nitrogen limitation, and is a member of the family of σN-dependent enhancer-binding proteins. Using limited trypsin digestion, two domains of NTRC were detected and conformational changes within the protein in response to the binding of ligands were also observed. In the absence of ligands, the major digestion products were 42, 36 and 12.5 kDa bands corresponding to the central plus C-terminal domain, the central domain, and the N-terminal domains, respectively. Upon binding of purine but not pyrimidine nucleotides, the 36 kDa band was insensitive to further proteolysis, indicative of a conformational change in the central domain. Analysis of the dependence of this insensitivity on ATPγS concentration suggested an apparent dissociation constant (Kd) for ATPγS of 150 μM. In the presence of DNA, both the central and C-terminal domains of NTRC were insensitive to proteolytic cleavage, indicative of a further conformational change. NTRC S160F, a mutant form of NTRC that is active in the absence of phosphorylation, was more stable to proteolysis than the wild-type protein. This mutant protein is apparently locked in a conformation resembling the DNA-bound form of wild-type NTRC. The involvement of ligands in self-association was studied using sedimentation equilibrium analysis. In the absence of ligand, wild-type NTRC displayed a monomer–dimer equilibrium with a Kd of 6 μM. In the presence of ATPγS the equilibrium was shifted towards the dimer form (Kd = 0.8 μM). A similar dissociation constant for the monomer–dimer interaction was observed with NTRC S160F in the absence of ATPγS (Kd = 0.5 μM). The addition of ATPγS induced a significant association of NTRC S160F to higher-order states with a dimer–octamer model producing a slightly, but not significantly better fit to the data than a dimer–hexamer model. We propose that ligand-mediated self-association provides a common mechanism for activation of this class of transcriptional regulatory proteins.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Analog integrated circuits and signal processing 8 (1995), S. 219-231 
    ISSN: 1573-1979
    Keywords: latch-up ; smart power ; CMOS technology ; design methodology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract To answer to the need of a cost effective smart power technology, an original design methodology that permits implementing latch-up free smart power circuits on a very simple CMOS/DMOS technology is proposed. The basic concept used to this purpose is letting float the wells of the MOS transistors most susceptible to initiate latch-up. The efficiency of the design methodology is experimentally shown.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Analog integrated circuits and signal processing 8 (1995), S. 233-246 
    ISSN: 1573-1979
    Keywords: smart power ; CMOS technology ; circuit design ; driving and protection functions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper intends to show that even with a CMOS technology main driving and protection functions of a power VDMOS can be made performant. Original circuits taking advantage of the availibility of the parasitic vertical bipolar transistor are presented and experimentally evaluated. A current mode approach is proposed to improve the accuracy of the current sensing function aimed at performing overcurrent, short-circuit and open-load detection.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1573-7195
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of radioanalytical and nuclear chemistry 208 (1996), S. 617-630 
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Humic acids and associated radionuclides were extracted from several soil samples with a significant organic matter content, such as peaty soils and forest soil layers. Extractions were made using two alkaline solutions (Na4P2O7 0.1 mol·1−1 and NaOH 0.1 mol·1−1 under N2). The humic acid content in the extract was determined by the capillary zone electrophoresis technique (CZE) and associated radiocaseium was determined by gamma spectrometry. After analizing a large number of samples and studying the relationship between humic acid and organic matter content it was possible to conclude that the CZE technique may be a good alternative to classical techniques in humic acid determinations, with NaOH extractions leading to higher results than Na4P2O7. Furthermore, the quantification of the radiocaseium desorbed by applying different extractant reagents (NaOH, Na4P2O7, NH4AcO and CaCl2) showed that there may be some organic matter-radionuclide interations, other than those originated by humic acids. which may govern radionuclide retention in soils with a high content of organic matter.
    Type of Medium: Electronic Resource
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