Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2578-2580
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The influence of low-temperature annealing in H2O vapor on electron-cyclotron-resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280 °C for 3 h 20 min, applied after annealing in forming gas at 450 °C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of −5.0×1010 cm−2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR-grown SiGe oxides. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117705
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