ISSN:
1432-0630
Keywords:
PACS: 78.55.Ap, 61.46.+w
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
+ -implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. There are two excitation bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show no appreciable shift. The PL and PLE spectral analyses suggest that during the PL process, electron–hole pairs are generated by the E(l) and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix or at the interface between the nanocrystal/matrix.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050760
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