Bibliothek

feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Artikel: DFG Deutsche Nationallizenzen  (9)
  • 1990-1994  (9)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (9)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The correlations between structural quality and superconducting behavior in 1000-A(ring)-thick Ba2YCu3O7−δ (BYCO) films grown on LaAlO3(100) from the coevaporation of BaF2, Y, and Cu, followed by an optimized ex situ annealing process are reported. Epitaxial films with smooth, laminar morphology and excellent crystallinity can be grown to have critical current density Jc values nearly identical to single crystals. This finding contrasts with the typical observation that Jc values in thin films of BYCO are very high compared to those of single crystals. This is attributed to a greater density of flux pinning sites due to structural defects within the films. The most crystalline films presented here have penetration length λ∼2000 A(ring) with temperature dependencies described well by the Bardeen–Cooper–Schrieffer (BCS) theory. Material disorder of two types can be controlled by the high-temperature stage Ta of the annealing process. The first type is point defects and dislocations the same size or smaller than the coherence length ξab, which Rutherford backscattering/channeling suggests decrease in number with increasing Ta. The second is crevices, pinholes, and microcracks, which are at least one to two orders of magnitude larger than ξab. At Ta 〈 850 °C, crevices, which create areas of nonuniform thickness, occur due to incomplete epitaxial growth and correlate with the presence of weak links. Hence film resistivity is high, Tc is low, and λ is large. As Ta is increased, the film morphology becomes smoother and all electrical properties improve, except for Jc in nonzero applied magnetic fields, since the improved epitaxy correlates with reduced flux pinning. By Ta= 900 °C, the BYCO films are similar to single crystals in both cation alignment and Jc behavior. Above this annealing temperature, pinholes and microcracks develop and increase in both size and density with increasing Ta. Although these relatively large defects do not act as weak links, they do affect magnetic screening (and hence λ), to result in an anomalous temperature dependence that masks the intrinsic BCS behavior.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6353-6360 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The superconducting and structural properties of Ba2YCu3O7−x (BYCO) films on LaAlO3(100) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by co-deposition of BaF2, Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Annealing parameters in an ex situ furnace, including the ambient, annealing temperature, oxidation temperature, and duration of anneals are systematically studied. Films are characterized for epitaxial quality (χmin), morphology, critical temperature (Tc), sharpness of the superconducting transition (ΔT), and critical current density (Jc). For example, beyond simply dissociating BaF2, the use of wet O2 appears to prevent the agglomeration of oxides during the initial heating process, and then act to thermodynamically stabilize the basic BYCO film structure at high temperatures after being formed. Comparisons are made with the best single-crystal BYCO structural and electrical data available. The optimized films have relatively smooth morphology with χmin〈3%, Tc〉90 K, ΔT〈0.5 K, and Jc〉106 A/cm2 in essentially zero magnetic field at 77 K.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the properties of NiFe2O4 thin films prepared by laser ablation of a stoichiometric NiFe2O4 target. Textured polycrystalline films were obtained on a-SiO2 as well as on various substrates with Au, Ag, Pt, and MgF2 buffer layers. Epitaxially oriented films were obtained on MgO, (11¯02)-oriented Al2O3, (112¯0)-oriented Al2O3, Y-stabilized ZrO2 (YSZ), and SrTiO3, although the crystalline quality of the films varied. Contamination by diffusion from the substrate and strains induced by both lattice constant mismatch and differential thermal expansion degraded the magnetic properties of the films, and in some cases decreased the electrical resistivity as well. By choosing the right substrate (YSZ), temperature (600 °C), and PO2 (0.01 mT), we are able to prepare epitaxial films with bulk saturation magnetization (Ms=270 G) and fairly low anisotropy (K∼105 erg/cm3) as inferred by torque magnetometry. These films and bilayers are expected to be useful in a variety of fundamental investigations as well as having the potential for technological applications.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3201-3203 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the precipitates in YBa2Cu3O7−δ(YBCO) thin films grown by the BaF2 process in pO2=4 Torr and 700 °C. While stoichiometric films result in BaCuO2 surface precipitates, we have found Y2Cu2O5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y〈1.5 have a precipitate-free surface but with higher abundance of Y2Cu2O5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 115-117 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaInO3 is recently identified transparent conducting material which is structurally and chemically distinct from indium tin oxide [R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall, and D. H. Rapkine, Appl. Phys. Lett. 64, 2071 (1994)]. We have used both dc reactive sputtering in the on- and off-axis geometries and pulsed laser deposition to grow films of this material. Layers of pure GaInO3 as well as those partially substituted with Ge for Ga or Sn for In have been studied. Both growth techniques are capable of producing films with conductivity ∼400 (Ω cm)−1 and transmission as high as 90% throughout the visible spectrum for ∼1-μm-thick films. The growth techniques differ in the morphology of the films produced as well as in the degree of dopant incorporation that can be achieved. A post-growth anneal in H2 can help produce an optimized oxygen content and a reduction of resistivity. Hall measurements indicate a carrier concentration up to 4×1020 cm−3 for all films and a Hall mobility up to 10 cm2/(V s). Doping appears to be due both to oxygen vacancies and aliovalent ion substitution.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2932-2934 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial Ba2YCu3O7−δ (BYCO) films grown by the ex situ BaF2 process are comparable to single crystals both in crystalline quality and the value and temperature dependence of the critical current (Jc) in an applied magnetic field in the BYCO (001) direction of Ha=0.9 T. With the appropriate dose of either 2 MeV H+ or 135Xe+, we can enhance Jc by a factor of 2 in Ha=0.9 T with little effect on Tc. This is significantly greater than the ∼25% enhancement previously reported for epitaxial BYCO films grown by in situ techniques [Roas, Hensel, and Saemann-Ischenko, Appl. Phys. Lett. 54, 1051 (1989)]. This provides the opportunity to isolate the induced defects and study their properties.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2071-2072 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    facet.materialart.
    Unbekannt
    Oxford : Periodicals Archive Online (PAO)
    Medium aevum. 61:1 (1992) 139 
    ISSN: 0025-8385
    Thema: Allgemeine und vergleichende Sprach- und Literaturwissenschaft. Indogermanistik. Außereuropäische Sprachen und Literaturen
    Notizen: REVIEWS
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...