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  • Electronic Resource  (3)
  • 1990-1994  (3)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 29 (1994), S. 6599-6603 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Sol-gel processed lanthanum-modified lead zirconate titanate (PLZT) thin films consisting of two different perovskite phase contents were fabricated on indium tin oxide coated Corning 7059 glass substrates with two different heating schedules: direct insertion at 650° C for 30 min and at 500° C for 2h. Optical transmittance spectra, polarization versus electric field curves, relative dielectric constant versus frequency and capacitance versus d.c. bias voltage curves of the samples were investigated. The samples showed a good transparency of over 70% and interference oscillation. A thin film consisting of mainly perovskite phase showed a slim loop hysteresis in the polarization versus electric field curve and in the capacitance versus d.c. bias voltage curve, indicating the presence of ferroelectric domains, but a film consisting of mainly pyrochlore phase did not. The dielectric constant and loss factor of the thin film consisting of mainly perovskite phase were about 90 and about 0.2, respectively, at relatively low frequency and showed dispersion of the dipolar polarization of permanent dipole moment in the ferroelectric perovskite phase in the frequency range between 10 kHz and 1 MHz.
    Type of Medium: Electronic Resource
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