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  • Electronic Resource  (4)
  • 1990-1994  (4)
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  • Electronic Resource  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356366
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes (1993)
    Springer
    Journal of materials science 28 (1993), S. 1168-1174 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstracct In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01191948
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characteristics and reheat-treatment effects in a ZnO varistor fabricated by two-stage heat-treatment (1991)
    Springer
    Journal of materials science 26 (1991), S. 1126-1130 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Conventional ZnO varistors are generally fabricated by sintering ZnO powder mixed with additives such as Bi2O3, Sb2O3, Cr2O3, Co2O3, and MnO2. To reduce abnormal grain growth and change in electrical characteristics in the conventional ZnO varistors caused by volatilization of Bi2O3, the ZnO powder with all additive oxides except Bi2O3 was pressed into disc form and sintered. The disc was then painted with metal oxide paste containing Bi2O3 and again fired. The ZnO varistor fabricated by this process, i.e. a two-stage heat-treatment process, showed typical non-linearI-V characteristics with higher breakdown voltage exceeding 800 V mm−1. It was also observed that the non-linearI-V coefficient change rate, Δα, in the ZnO varistor due to reheat-treatment is almost linearly proportional to the sintered density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00576798
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of silicon membrane using fusion bonding and two-step electrochemical etch-stopping (1994)
    Springer
    Journal of materials science 29 (1994), S. 664-668 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new type of silicon membrane structure was fabricated using wafer fusion bonding and two-step electrochemical etch-stopping methods. An “active wafer” of p-type epi/n-type epi/p-type substrate was first elctrochemically etched to form a shallow cavity on the p-type epitaxial layer. Then, the cavity-formed side was fusionally bonded with p-type silicon “working wafer” and, afterwards, the p-type substrate of the active wafer part was removed by a second electrochemical etch-stopping leaving only the n-type membrane on the shallow cavity. Using the new membrane structure in mechanical sensors, more precise control of cavity depth and membrane thickness was achievable and the influence of crystalline imperfections on the sensing circuits located near the bonding seam was avoidable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00445976
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    Paper (German National Licenses)
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