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  • 1
    Electronic Resource
    Electronic Resource
    Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4253-4257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a decrease of the number of effective emission centers Mn2+ in the aged ZnS:Mn electroluminescence (EL) devices compared to the fresh EL devices using the electron-paramagnetic-resonance technique. Such phenomena can take place during the operation of the EL device, since the isolated Mn can easily diffuse into another site and forming cluster. Another possible explanation is that Mn2+ changes into Mn1+ or Mn3+ by transferring the electronic charge of the isolated Mn2+ to the neighboring Mn ions via sulfur and/or sulfur vacancy. As a result, luminance is lowered due to the decrease in the number of efficient emission centers of isolated Mn2+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359887
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  • 2
    Electronic Resource
    Electronic Resource
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356366
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  • 3
    Electronic Resource
    Electronic Resource
    Impact of surface properties on the dielectric breakdown for polycrystalline and multilayered BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6203-6208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric reliability for polycrystalline and multilayered BaTiO3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO3 thin film sustained about 105 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO3 film having a relatively thick underlayer of polycrystalline BaTiO3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism (e.g., lowering and spreading) is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO3. The reduced leakage current at the thick multilayered BaTiO3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366505
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-paramagnetic-resonance study of the Mn2+ luminescence center in ZnS:Mn powder and thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of isolated Mn2+ ions and Mn2+ clusters in ZnS:Mn powder and thin films has been studied using Mn2+ spectra measured at room temperature with an X-band electron-paramagnetic-resonance spectrometer. While the concentration of the isolated Mn2+ ions decreases with increasing Mn concentration, the concentration of the clusters increases. At low Mn concentration, the Mn2+ ion substitutes for the Zn ion in ZnS:Mn in the cubic phase. At high Mn concentrations, where the ZnS powder has a dominant hexagonal phase, the Mn ion still prefers to substitute for Zn in ZnS:Mn at the cubic site rather than at the hexagonal site. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360886
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362498
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of the 1.356 eV band and stoichiometry in undoped GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 736-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the 1.356 eV emission band measured by photoluminescence (PL) is investigated by correlating the Hall measurement data for the same materials. The crystals grown by the horizontal-Bridgman technique were As or Ga rich by controlling As-zone temperatures. Type conversion from n to p type with the thermal activation energy ΔE=0.133 eV and ΔE=0.05 eV were achieved by heat treatment of the As-rich crystals. The Ev +0.133 eV level and the 1.356 eV band may not be attributed to the same defect because the Ev +0.133 eV level is electrically active with a nonradiative center and the 1.356 eV band is radiative with an electrically inactive (neutral) center. Therefore, both Ev +0.133 eV level and the 1.356 eV band were not attributed to copper impurity because copper is electrically and optically an active center in GaAs. The 1.356 eV band measured by PL may be due to a gallium-vacancy related complex, but differs from VGa -donor complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343087
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  • 7
    Electronic Resource
    Electronic Resource
    Brassinolide affects the rate of cell division in isolated leaf protoplasts of Petunia hybrida (1998)
    Springer
    Plant cell reports 17 (1998), S. 921-924 
    Details
    ISSN: 1432-203X
    Keywords: Key words Brassinosteroid ; Brassinolide ; Protoplast ; Cell division
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Brassinosteroids are known to promote cell elongation in a wide range of plant species but their effect on cell division has not been as extensively studied. We examined the effect of brassinolide on the kinetics and final division frequencies of regenerating leaf mesophyll protoplasts of Petunia hybrida Vilm v. Comanche. Under optimal auxin and cytokinin conditions, 10–100 nM brassinolide accelerated the time of first cell division by 12 h but had little effect on the final division frequencies after 72–120 h of culture. One micromolar brassinolide showed the same acceleration of first cell division but inhibited the final division frequency by approximately 20%. Under sub-optimal auxin conditions, 10–100 nM brassinolide both accelerated the time of first cell division and dramatically increased the 72- to 120-h final division frequencies. Isolated protoplasts may provide a useful model system to investigate the molecular mechanisms of brassinosteroid action on cell proliferation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002990050510
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of silicon membrane using fusion bonding and two-step electrochemical etch-stopping (1994)
    Springer
    Journal of materials science 29 (1994), S. 664-668 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new type of silicon membrane structure was fabricated using wafer fusion bonding and two-step electrochemical etch-stopping methods. An “active wafer” of p-type epi/n-type epi/p-type substrate was first elctrochemically etched to form a shallow cavity on the p-type epitaxial layer. Then, the cavity-formed side was fusionally bonded with p-type silicon “working wafer” and, afterwards, the p-type substrate of the active wafer part was removed by a second electrochemical etch-stopping leaving only the n-type membrane on the shallow cavity. Using the new membrane structure in mechanical sensors, more precise control of cavity depth and membrane thickness was achievable and the influence of crystalline imperfections on the sensing circuits located near the bonding seam was avoidable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00445976
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characteristics and reheat-treatment effects in a ZnO varistor fabricated by two-stage heat-treatment (1991)
    Springer
    Journal of materials science 26 (1991), S. 1126-1130 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Conventional ZnO varistors are generally fabricated by sintering ZnO powder mixed with additives such as Bi2O3, Sb2O3, Cr2O3, Co2O3, and MnO2. To reduce abnormal grain growth and change in electrical characteristics in the conventional ZnO varistors caused by volatilization of Bi2O3, the ZnO powder with all additive oxides except Bi2O3 was pressed into disc form and sintered. The disc was then painted with metal oxide paste containing Bi2O3 and again fired. The ZnO varistor fabricated by this process, i.e. a two-stage heat-treatment process, showed typical non-linearI-V characteristics with higher breakdown voltage exceeding 800 V mm−1. It was also observed that the non-linearI-V coefficient change rate, Δα, in the ZnO varistor due to reheat-treatment is almost linearly proportional to the sintered density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00576798
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial oxide growth and filling-up behaviour of the micro-gap in silicon fusion bonding processes (1993)
    Springer
    Journal of materials science 28 (1993), S. 1168-1174 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstracct In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 100/dg fo 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the non-contact micro-gap region having a width of ≤ 0.1 μm can be obtained if the hydrogenbonded wafer pair is pre-stabilized and post-annealed in wet O2 (95°C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above result, we propose that the stabilizing and annealing step in highlt oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01191948
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