Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6203-6208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric reliability for polycrystalline and multilayered BaTiO3 thin films has been evaluated using time-zero and time-dependent dielectric breakdown techniques. The histogram of dielectric breakdown for multilayered BaTiO3 thin films showed a typical Weibull distribution in contrast to a random distribution when compared with polycrystalline BaTiO3 thin films. The measurement resulted in that the 400 nm-thick multilayered BaTiO3 thin film sustained about 105 hour-long operation at 1 MV/cm, showing superior properties when compared with polycrystalline. The smaller leakage current level was obtained for a multilayered BaTiO3 film having a relatively thick underlayer of polycrystalline BaTiO3 film. The value of the breakdown field was smaller at the thicker multilayered BaTiO3 while the distribution of the breakdown widened for thicker film. Analysis of the roughness for the films confirmed that the field breakdown mechanism (e.g., lowering and spreading) is related to the surface roughness of the topmost layer which varies with the thickness of underlying polycrystalline BaTiO3. The reduced leakage current at the thick multilayered BaTiO3 was due to the presence of a wide transition layer between polycrystalline and amorphous BaTiO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 10 (1999), S. 661-666 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microwave dielectric properties of (Pb1-xCax){(Fe0.5Nb0.5)1-ySny}O3 ceramics (0.4 ≤ x ≤ 0.6, y = 0.05, 0.1) and design of 900 MHz band 2-pole monoblock band pass filter (BPF) have been investigated to fabricate BPF. Single-phase specimens having orthorhombic perovskite structure similar to CaTiO3 could be obtained in the compositions of Pb1-xCax){(Fe0.5Nb0.5)1-ySny}O3 (0.4 ≤ x ≤ 0.6, y = 0.05, 0.1). The substitution of Sn for Fe0.5Nb0.5) significantly increased the quality factor Q and slightly decreased the dielectric constant (ɛr). The temperature coefficient of the resonant frequency of 0 ppm °C−1 was realized at x = 0.55 and y = 0.1. The Q · f 0 value and (ɛr) for this composition were found to be 8600 GHz and 86, respectively. A monoblock λ/4 dielectric BPF for 900 MHz band portable telephone terminal is presented. This BPF is a kind of combline filter. Computer-aided design (CAD) was used in the modeling procedure. The equivalent circuit of the monoblock BPF is represented by transmission lines and lumped elements based on Zoe and Zoo. A BPF model was designed for surface mounted device (SMD) types. The simulations of the equivalent circuit and BPF structure have been performed to optimize the filter design. Newly developed Pb0.45Ca0.55){(Fe0.5Nb0.5)0.9Sn0.1}O3 dielectric materials were used for BPF fabrication. Experimental results of the fabricated device were in good agreement with the simulation.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Sol-gel processed PLZT thin films were fabricated on ITO-coated glass substrates with RTA (rapid thermal annealing). The electrical and optical properties such as hysteresis curves, dielectric constant, dielectric loss and optical transmittance of thin films were investigated. The PLZT thin films were crystallized to the perovskite structure by RTA at 750°C for 5 min. As the La percentage was increased, the dielectric constant increased, and that of 9/65/35 PLZT thin film was 1750. The coercive field and remnant polarization decreased with La increase from 33.82 kV/cm to 14.71 kV/cm and from 39.26 μC/cm2 to 9.57 μC/cm2 respectively. As the Zr percentage increased at 2% La, the coercive field decreased from 52.94 kV/cm to 30 kV/cm, but the remnant polarization increased from 22.74 μC/cm2 to 50.75 μC/cm2, and the dielectric constant had a maximum value of 1269 at 2/55/45 composition. The optical transmittance was increased as La percentage increased but was decreased as the annealing temperature increased.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...