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  • 2000-2004  (40)
  • 1990-1994  (52)
  • 1960-1964  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4138-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357364
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  • 2
    Electronic Resource
    Electronic Resource
    Nb interaction with hydrogen plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 760-766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A niobium membrane was immersed in hydrogen plasma and could be electrically biased to vary the energy of bombarding ions in the range of 1–200 eV. The fluxes of plasma driven absorption and permeation were almost entirely governed by incident suprathermal neutrals (mostly, thermal atoms), whose energy does not depend on membrane bias, but the ions of controllable energy do affect the neutral-induced permeation through modifying the membrane surface. At the zero bias a high temperature-independent plasma driven permeation (superpermeation) was observed alongside of an enhanced absorption. Bombardment by ions of an energy higher than 50 eV resulted in a sharp decrease of the plasma driven permeation/retention and in an acceleration of boundary processes of absorption/reemission of thermal molecules. At ion energies below 50 eV, the effect of ion bombardment on the plasma driven permeation and the kinetic coefficients of boundary processes were nonmonotonic in ion energy, having a maximum at ∼10 eV. Both an in situ doping with O of the bulk of Nb and a membrane temperature increase reduced the effects of ion bombardment to their complete disappearance. Responsible for that was the replenishment by means of surface segregation of an oxygen monolayer sputtered by ion bombardment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331075
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of a Ti seed layer on the magnetic properties of CoCrTa double-layered perpendicular media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6367-6369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a Ti seed layer on the magnetic properties and microstructure of Co77Cr19Ta4 was studied in Co77Cr19Ta4/Ti/M (M=Co91Zr3Nb6, Fe, Co) double-layered perpendicular recording media. A thin Ti film of ∼5 nm enhanced the c-axis alignment perpendicular to the film plane, resulting in a large perpendicular anisotropy Ku and the best magnetic properties under the present experimental conditions. The coercivity at this Ti thickness (3–3.7 kOe) was approximately half of the magnetocrystalline anisotropy field Hk estimated from the Ku value, even with the present thick 50 nm CoCrTa. The recording performance using a single-pole-type writing head showed that media with a 5 nm Ti layer had higher recording sensitivity compared to media without Ti layers, and a higher SN value at densities greater than 200 kFRPI. No significant loss of recording resolution due to the nonmagnetic Ti space between the CoCrTa and the back layers was observed by the use of the 5 nm Ti film. Moreover, the results for media with Fe back layers indicated that a thinner back layer with a high flux density can be used without any reduction of recording sensitivity and resolution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372708
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  • 4
    Electronic Resource
    Electronic Resource
    High frequency effects in perpendicular recording media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4990-4992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of perpendicular recording media were carried out to determine the effect of switching speed limitations upon recording performance. Simulations of hysteresis loops at various applied field sweep rates show that the onset of a switching speed limited increase in coercivity occurs for sweep rates in excess of 2×1013 Oe/s. Switching speeds of individual grains were found to be around 18 to 38 ps, depending on the medium thickness and the magnetization state of surrounding grains. Recording simulations show that for media thicknesses of up to 180 Å, writing frequencies of 5 Gbit/s are feasible before loss of output occurs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373225
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104762
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of GaAs grown on Si epitaxial layers on GaAs substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 220-225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs has been grown on 9 and 18 A(ring) thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 A(ring) thickness of Si on GaAs is pseudomorphic while 18 A(ring) of Si is relaxed. Antiphase domains (APDs) were observed to annihilate near the GaAs on Si interface. Annihilation ocurred within 100 A(ring) of the interface for the 9 A(ring) thickness of Si and around 1500 A(ring) for the 18-A(ring) Si case. From a detailed analysis of the APD shapes and sizes, we deduce that GaGa bonds are energetically favored in the {111} planes and that two separate APD annihilation mechanisms occur. The growth mode of epitaxial Si on GaAs was also studied by in situ high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347754
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  • 7
    Electronic Resource
    Electronic Resource
    Experiments on ion-acoustic shock waves in a dusty plasma (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 440-445 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dust ion-acoustic shock waves have been investigated experimentally in a homogeneous unmagnetized dusty double-plasma device. An initial compressional wave with a ramp shape steepens to form oscillations at the leading part due to dispersion. The oscillation develops to a train of solitons when the plasma contains no dust grain. The wave becomes an oscillatory shock wave when the dust is mixed in the plasma and the density of the dust grains is smaller than a critical value. When the dust density is larger than the critical value, only steepening is observed at the leading part of the wave and a monotonic shock structure is observed. The velocity and width of the shock waves are measured and compared with results of numerical integrations of the modified Korteweg–de Vries–Burgers equation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431974
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  • 8
    Electronic Resource
    Electronic Resource
    Compatibility between high energy particle confinement and magnetohydrodynamic stability in the inward-shifted plasmas of the Large Helical Device : Review,Tutorial and Invited Papers from the 43rd Annual Meeting of the APS Division of Plasma Physics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 2020-2026 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimentally optimized magnetic field configuration of the Large Helical Device [A. Iiyoshi et al., Nucl. Fusion 39, 1245 (1999)], where the magnetic axis is shifted inward by 15 cm from the early theoretical prediction, reveals 50% better global energy confinement than the prediction of the scaling law. This configuration has been investigated further from the viewpoints of high energy particle confinement and magnetohydrodynamic (MHD) stability. The confinement of high energy ions is improved as expected. The minority heating of ion cyclotron range of frequency was successful and the heating efficiency was improved by the inward shift. The confinement of passing particles by neutral beam injection was also improved under low magnetic field strength, and there could be obtained an almost steady high beta discharge up to 3% in volume average. This was a surprising result because the observed pressure gradient exceeded the Mercier unstable limit. The observed MHD activities became as high as beta but they did not grow enough to deteriorate the confinement of high energy ions or the performance of the bulk plasma, which was still 50% better than the scaling. According to these favorable results, better performance would be expected by increasing the heating power because the neoclassical transport can also be improved there. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448345
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  • 9
    Electronic Resource
    Electronic Resource
    Scattering and extinction of ion beams in a dusty plasma device (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 5086-5090 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Collisions of ions with charged dust grains are important for the propagation of low frequency waves such as dust acoustic waves and dust ion-acoustic waves. The collision cross-sectional area of charged dust grains depends on the velocity of an ion beam. The collision cross-sectional area of charged dust grains with beam ions is measured. It is compared with the geometrical cross-sectional area of the grain. The experiment is performed in a dusty double-plasma device with glass beads of 8.9 μm in average diameter. The ion beam current and energy are measured with a directional retarding potential analyzer. It is observed that, when dust density inside the system is increased, the beam current ratio is reduced. From the reduction of the ion beam current, the effective cross-sectional area of the dust particle is estimated as a function of the beam energy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419253
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of ion-acoustic solitary waves in a dusty plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3921-3926 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experiment on ion-acoustic solitary waves in dusty plasma is performed in a dusty double-plasma device. The leading part of a sinusoidal pulse develops to an oscillation. The troughs of the oscillation become shallow when dust particles are mixed into the plasma. The Mach velocity of the first peak in the oscillation decreases due to the presence of negatively charged dust grains for a fixed height of the peak. The width of the peak normalized with Debye length increases when the dust particles are introduced into the plasma. The experimental results are compared with the numerical integrations of a modified Korteweg–de Vries–Burgers equation which contains the terms of kinematic viscosity and of collisions of ions with the dust particles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1387472
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