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  • 1
    Electronic Resource
    Electronic Resource
    Spatial resolved emission spectroscopic study on laser plume of Y1Ba2Cu3Ox at different oxygen pressures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3697-3702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the characteristics of the plume generated by the laser ablation of Y1Ba2Cu3Ox, emission spectra of the ejected species were observed at different distances from the target in an oxygen atmosphere. It was found that velocities of ejected species increased with the distance from the target. At 35 mm from the target the emission intensities of Y, Ba, O atoms, and YO molecules drastically increased to an order of magnitude larger beyond several tens mTorr of oxygen pressure. This increase of emission intensity was due to the increment of the plasma density by a shock front formed at ∼35 mm. Above 0.5 Torr of oxygen pressure, molecular YO was produced by the oxidation of Y atoms. The plasma temperature was also elevated by shock heating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361201
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  • 2
    Electronic Resource
    Electronic Resource
    Cross sections for 16O(He,He)16O resonant elastic scattering and application to elemental analysis of YBa2Cu4O8 and Nd1+xBa2−xCu3O7−δ films grown on SrTiO3 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 14-20 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential cross sections for 16O(He,He)16O resonant elastic scattering at 3.034 and 3.078 MeV have been measured using stoichiometric thin (100 A(ring)) and thick (6000 A(ring)) SiO2 layers formed on Si(100) wafers by thermal oxidation at 900 °C under H2 and O2 flows. We have determined the resonance widths (Γ) and interaction radii (a), which are the parameters defining the cross sections in the partial wave analysis, by best fitting the angular and energy dependent scattering yields from oxygen. A computer simulation program for Rutherford backscattering including the 16O(He,He)16O resonant scattering has been synthesized and applied to the elemental analysis of thin YBa2Cu4O8 and Nd1+xBa2−xCu3O7−δ films grown on SrTiO3 substrates. The present elemental analysis is compared with the transition temperatures of superconductivity (Tc) in the context of the oxygen deficiency. The accuracy of oxygen content is estimated to be better than 0.1 (a few %). How to improve the accuracies of the elemental analysis, in particular the oxygen content, is discussed in detail. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360948
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  • 3
    Electronic Resource
    Electronic Resource
    Numerical simulation of the effect of Cs volume reaction in an H− ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1132-1134 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Effects of cesium related reactions are investigated using a simulation code for H− ion sources. Effects begin to appear when cesium density is 1011 cm−3, but are still small and become large when the cesium density is greater than 1012 cm−3. The H− density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller H− density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around 1011 cm−3. For cesium density greater than 1012 cm−3, the effect of the cesium related volume reaction becomes larger. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148646
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  • 4
    Electronic Resource
    Electronic Resource
    Estimate of cusp loss width in multicusp negative ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 968-970 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Expression of cusp loss width derived by Bosch and Merlino is applied to JAERI's Kamaboko source. The width is related to the ambipolar diffusion coefficient across the cusp magnetic field. Electron–ion collision is found 1.2–7.4 times larger as compared with electron-neutral collision. Averaged cusp magnetic field in the diffusion coefficient is taken as a parameter in the simulation code for Kamaboko source. When the averaged magnetic field is 48 G, simulation results agree well with JAERI's experiment in a wide range of pressure and arc power variation. The value of 48 G is reasonable from the consideration of confining the equation of ion source plasma. The obtained width is about 10 times the value evaluated by two times ion Larmor radius on the surface of cusp magnet. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148603
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  • 5
    Electronic Resource
    Electronic Resource
    Interaction of the residual hydrogen gas with the growth of Y1Ba2Cu3O7−x films under high vacuum (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5703-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1Ba2Cu3O7−x films were fabricated by a reactive evaporation method using 10-mol-% O3 gas as an oxygen source. Mass spectroscopy measurement revealed that hydrogen gas was ejected from Y metal and Ba metal sources during evaporation. Y1Ba2Cu3O7−x film growth was adversely affected by the existence of this hydrogen gas, confirmed by in situ reflection high-energy electron diffraction (RHEED) observation. A streak RHEED pattern was maintained throughout evaporation only when the hydrogen partial pressure was smaller than 1×10−6 Torr. Only films grown under this condition showed superconducting behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350191
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  • 6
    Electronic Resource
    Electronic Resource
    Dependence of the magnetization in YBa2Cu3O7−x thin films on the applied magnetic field direction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the magnetization on the applied magnetic field direction was investigated at 5 K on superconducting thin films of YBa2Cu3O7−x prepared by ArF laser ablation with the c axis perpendicular to the film plane. The difference of the magnetic moment between the increasing and decreasing branches of the hysteresis curves at zero field depends on the angle θ between the film normal and the magnetic field as ||cos θ||. This result can be attributed to the magnetic moment perpendicular to the film plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104750
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  • 7
    Electronic Resource
    Electronic Resource
    Sequential deposition growth of Bi-Sr-Ca-Cu-O systems observed using in situ reflection high-energy electron diffraction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 654-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal growth mechanism in Bi-Sr-Ca-Cu-O thin films has been revealed by sequential deposition with an electron cyclotron resonance (ECR) oxygen plasma using in situ reflection high-energy electron diffraction (RHEED) observation. A series of RHEED patterns presents clear evidence that the unit cell of the Bi-Sr-Ca-Cu-O structure is completed as the Bi layers have sandwiched Sr, Ca, and Cu layers. This crystalline process is not an atomic layer by atomic layer growth but a "unit cell by unit cell'' growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104559
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  • 8
    Electronic Resource
    Electronic Resource
    Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltage (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6331-6335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive bias being more effective than negative, decreased very slightly when the substrate temperature was lowered, whereas that of the unbiased films decreased considerably. In addition, the surface morphology and c-axis orientation have been improved by applying substrate bias voltages. Bias voltages within ±500 V hardly affect the composition of the resulting films so that stoichiometric films have been obtained from a stoichiometric target. A time-resolved optical observation revealed that a short time emission, probably being oxygen plasma, occurred in a few μs after the laser pulse impingement. The improvement in crystallinity of the resulting films is attributed to this emission. The velocity of emissive species in the plume was determined to be 6×105 cm/s. Under positive-biased conditions slower components with a velocity of 3×105 cm/s or less were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346877
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  • 9
    Electronic Resource
    Electronic Resource
    Scanning probe microscopy of NdBa2Cu3Ox thin film surfaces (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2155-2157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that NdBa2Cu3Ox (NBCO) thin films, fabricated by the laser ablation process, have highly stable and smooth surfaces. Clear spiral patterns with 4–5 terraces are observed all over the film area with an atomic force microscope (AFM) operating in air. We have also obtained atomically resolved image of the spiral terraces using AFM, and also using ultrahigh vacuum scanning tunneling microscope. This study suggests that NBCO film is a good candidate for device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114751
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stability of YBa2Cu3O7−x single crystal surfaces investigated by the ion channeling technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 841-843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed ion channeling characterizations on the (001) and (100) surfaces of YBa2Cu3O7−x single crystals, using 950 keV He+ ions at temperatures ranging from 20 to 780 °C. In oxygen pressures below 5×10−5 Torr, we directly observed the surface changes as the sample temperature was increased, and found that the compositional and structural changes occurred from around 400 °C. At higher oxygen pressures, we heated the crystals and performed channeling analysis before and after the heating. We found that the YBa2Cu3O7−x crystal surfaces were stable at temperatures up to 780 °C in the oxygen pressure range of 1 mTorr–1 Torr. Beyond this range, the surfaces deteriorated at high temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119663
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