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  • 1990-1994  (3)
  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Temperature effects on the photoluminescence of GaAs grown on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are observed. The extrinsic lines give evidence of growth-induced defects. One of these lines, involving the presence of Si acceptors, appears after post-growth annealing (10 min at 800 °C). The biaxial stress deduced from the intrinsic lines varies with temperature; extrapolation to zero stress results in a temperature slightly below the growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100829
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Charge state controlled short- and long-range defect motions in GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1973-1975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the charge state dependent annealing reactions for a defect (H2, 0.4 eV) in p-type GaAs following room-temperature electron irradiation. Using deep level transient spectroscopy, it is shown that one of two absolutely different defect reaction branches is chosen depending on the junction bias condition. The ranges of defect motion involved in these two reactions are markedly different: When the H2 center is emptied of hole it disappears near room temperature by several defect jumps to the near neighbor sites, whereas when it is occupied with hole it annihilates at 370–380 K by long-range defect motion. The observed defect motions are well described by the simple charge state effect upon the defect which has two distinct reaction branches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99594
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Reduction method ofN-body equations (1992)
    Springer
    Few body systems 12 (1992), S. 201-215 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract N-body equations of identical-particle systems are explicitly evaluated forN=3 toN=6. The formalism used is of the Faddeev-Yakubovsky type as derived from the so-called chain-of-partition-labeled approach by Cattapan and Vanzani. We compare the resulting equations with the ones from the multi-three cluster coupling model as given by Sawada et al. and establish an important relation between these two classes ofN-body equations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01074816
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Algorithm for solving the Faddeev equations in the three-body continuum under avoidance of moving logarithmic singularities (1994)
    Springer
    Few body systems 16 (1994), S. 165-175 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new method is presented for solving the Faddeev equations in the three-body continuum, which avoids the moving logarithmic singularities present in momentum space methods used up to now. The new algorithm leads to a simple structure of the Faddeev integral kernel, what simplifies significantly the numerical realization. Its application in nuclear physics is, however, still plagued by the presence of the virtual-state pole in the nucleon-nucleon1S0 channel. Omitting that channel in calculations with the Bonn-B potential we demonstrate excellent agreement between three-nucleon observables obtained with the new and a former method. Since the codes are quite different, this can be considered as a convincing test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01344396
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Application of the Alt-Grassberger-Sandhas equations to the three-alpha model (1994)
    Springer
    Few body systems 17 (1994), S. 185-197 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The three-alpha model of the12C nucleus is calculated by solving the Alt-Grassberger-Sandhas (AGS) equations with effective cluster-cluster potentials directly derived from the resonating-group method and modified by the orthogonality-condition model or the fish-bone optical model techniques. Instead of using Kukulin's pseudo-potential projection method for the Pauliforbidden state, which is approximative but the only method used up to now, we introduce a new exact method to give the transition matrices. The dependence of the12C binding energy on the strength of Serber force is shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01074451
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    Paper (German National Licenses)
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