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Effect of hydrogenation on deep-level traps in InP on GaAs (1992)

Chen, Y. F. ; Sung, K. C. ; Chen, W. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 509-511

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 1015 cm−3 for samples with a carrier concentration of 1016 cm−3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm−3 and of the carrier concentration to 1015 cm−3.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350687

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Studies on graft copolymers derived by ionizing radiationThis work has been supported in part by the United States Atomic Energy Commission. (1957)

Chen, W. K. W. ; Mesrobian, R. B. ; Ballantine, D. S. ; [et al.]

Hoboken, NJ : Wiley-Blackwell

Journal of Polymer Science 23 (1957), S. 903-913

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ISSN: 0022-3832

Keywords: Chemistry ; Polymer and Materials Science

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology , Physics

Notes: Studies are presented on the preparation of graft copolymers by the gamma-ray irradiation of various polymer-monomer combinations. The following graft copolymers have been prepared and evaluated for specific applications: (1) vinylcarbazole grafted to polyethylene to produce a higher temperature dielectric material; (2) styrene grafted to polyethylene and sulfonated to produce a cation exchange membrane of high mechanical strength, low resistivity, and high permeaselectivity; (3) surface grafting of styrene to polytetrafluoroethylene for modification of adhesive properties; (4) acrylonitrile grafted to polydimethylsiloxane to increase solvent resistance of the latter.

Additional Material: 8 Ill.