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Effect of hydrogenation on deep-level traps in InP on GaAs (1992)

Chen, Y. F. ; Sung, K. C. ; Chen, W. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 509-511

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 1015 cm−3 for samples with a carrier concentration of 1016 cm−3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 1014 cm−3 and of the carrier concentration to 1015 cm−3.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350687

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