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  • 1
    Electronic Resource
    Electronic Resource
    Absolute magnetometry at nanometer transverse spatial resolution: Holography of thin cobalt films in a scanning transmission electron microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7418-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for the absolute measurement of magnetization at nanometer spatial resolution in magnetic thin films has been developed. A biprism placed in the illumination system of a scanning transmission electron microscope allows the operation of two distinct holography modes. The absolute mode displays a linear change in phase difference for regions of constant magnetization and thickness and the slope determines the magnitude of magnetization. The differential mode displays a constant value of phase difference in these regions allowing a simple and straightforward determination of domain wall profiles. Micromagnetic structure extracted from identical areas of thin Co films is compared using the new holography modes, differential phase constrast Lorentz microscopy and conventional Fresnel Lorentz microscopy in the same instrument.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356658
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  • 2
    Electronic Resource
    Electronic Resource
    Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 698-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a nanoprobe electron beam 4 A(ring) in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345774
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  • 3
    Electronic Resource
    Electronic Resource
    Thickness dependence of ferroelectric domains in thin crystalline films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of ferroelectric domains in thin free-standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112835
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "Electron holographic study of ferroelectric domain walls'' (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2446-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109340
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  • 5
    Electronic Resource
    Electronic Resource
    Electron Diffraction Study of the Hydrogen Bonds in Boric Acid (1953)
    [s.l.] : Nature Publishing Group
    Nature 171 (1953), S. 440-441 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Zachariasen1 has shown that boric acid has a layer lattice structure. The layers are composed of planar BO33~ groups joined by hydrogen bonds, and have hexagonal symmetry. These layers are stacked in such a way that the unit cell is triclinic and contains portions of two layers. Boric acid ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/171440a0
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical and experimental studies of electron resonance effects in reflection high-energy electron diffraction (1991)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 317-327 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The electron resonance effect for 100 keV electrons incident on the surface of GaAs (110) in RHEED is studied by theoretical simulations using multislice theory and experimental observations. The exact resonance conditions, effective resonance region, effective penetration depth of electrons at or near the resonance condition and scattering processes involved for the resonance effect are investigated. It is found that the intensity of the 440 specularly reflected beam is mainly due to direct reflection from the surface atomic layer and beam enhancement due to surface channeling effects under the resonance conditions seems to be insignificant. For the 880 specularly reflected beam most of the electron intensity penetrates the surface and is diffracted by the crystal. The resonance condition for the 880 specular beam is satisfied when the transmitted beam excites a strong surface wave which propagates in the direction parallel or nearly parallel to the surface and is localized in the surface region by the surface potential barrier; double diffraction from the surface beam to the specular beam then enhances the total intensity in the specular beam. The exact resonance condition for the 880 beam is found to be at the glancing angle of 35.7 mrad and the azimuth angle of 29.7 mrad. A strong wave field is localized in the surface region at the resonance condition with an effective electron penetration depth of ̃5 Å, which increases to ̃35 Å on going to the nonresonance conditions. The effective resonance region for the 880 spot is ̃2 mrad about the azimuth angle and 1̃ mrad about the glancing angle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S010876739001025X
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  • 7
    Electronic Resource
    Electronic Resource
    Stacking faults in γ-alumina (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 53-54 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53000119
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  • 8
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. I. Techniques (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 516-521 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53001411
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  • 9
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. II. Disordered boric acid structure (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 522-529 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53001423
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  • 10
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. III. Modification of alumina (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 846-853 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53002489
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