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  • 1990-1994  (21)
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  • 1
    Electronic Resource
    Electronic Resource
    Demonstration of confined optical field effect in a vertical microcavity by examining the low temperature photon-exciton interaction in two kinds of quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1068-1070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report new results on a photon-exciton interaction in a λ cavity having two kinds of quantum wells (QWs) with the thickness of 62 and 90 A(ring) which are sited at the antinode and two nodes of the standing wave, respectively. By measuring the reflectivity spectrum of the quantum microcavity, mode splitting (two dips) is observed when the photons in the cavity are resonant with the excitons of 62 A(ring) QWs at 14 K. However, no mode splitting (one dip) is observed when the microcavity is tuned to the quantized energy of the excitons arising from the 90 A(ring) QWs. The reason is the difference of the coupled interaction between photons and excitons due to the standing wave distribution of the optical field in the microcavity. The above results clearly demonstrate the controllability of quantum electrodynamics effects due to the confined optical mode (i.e., the standing wave) in a high-Q microcavity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110934
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Picosecond spectral dynamics of gain-switched quantum-well lasers and its dependence on quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2675-2677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved spectra of gain-switched GaAs/AlGaAs quantum-well (QW) lasers are measured by a streak camera with a monochromator to investigate effects of QW structures on picosecond lasing dynamics. The result shows that both pulse forms and spectral dynamics strongly depend on the number of the QWs: The pulse duration and spectral width are both broadened when the number of QWs is smaller. This dependence mainly results from the difference in the gain profile at the initial stage of the pulse formation due to the difference in the carrier concentration per well (cm−2). In addition, the overflow effect of carriers outside of QWs also plays a significant role when the number of QWs is smaller. Theoretical discussions considering dynamic behavior of the gain and the capturing effect of carriers into QWs explain the experimental results well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345483
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 533-535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful fabrication of thin GaAs quantum wires (120–200 A(ring))×(200–300 A(ring)) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350695
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Picosecond dynamics in gain-switched uncoupled and coupled quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the importance of two-dimensional carrier confinement for picosecond dynamics in gain-switched quantum well lasers, measuring time-resolved spectra of gain-switched quantum well (QW) lasers with coupled QWs and uncoupled QWs. The result indicates that an extremely short pulse (〈2 ps) is generated in the uncoupled QW lasers. On the other hand, the pulse duration is about 10 ps in the coupled QW lasers in which the two-dimensional confinement effect is significantly reduced owing to the miniband formation. These results demonstrate the importance of the two-dimensional confinement of carriers for the short pulse generation in the semiconductor lasers. The measured dynamic spectral shift of the gain-switched QW lasers also confirm the significant role of the two-dimensional carrier confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105011
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Differential gain of GaAs/AlGaAs quantum well and modulation-doped quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential gain which is an important parameter for modulation dynamics in semiconductor lasers is evaluated experimentally by measuring the gain coefficient and the carrier lifetime in GaAs/AlGaAs double-heterostructure (DH) lasers, quantum well (QW) lasers, and p-modulation-doped quantum well (p-MDQW) lasers. The results indicate that the differential gain of the QW laser is 2.4 times as high as that of the DH laser, which is consistent with the theory. In addition, it is found that improvement of the differential gain using the p-MDQW structure is not so large as that expected by the theory. This result suggests that enhanced energy broadening due to the reduction of the equivalent dephasing time τeqin, which includes both the dephasing time τin due to the intraband relaxation and the band tailing effects, significantly affects the gain spectra in the p-MDQW lasers, which is confirmed by the measurement of the spontaneous emission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104440
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Tight-binding analysis of the conduction-band structure in quantum wires (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1224-1226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tight-binding method is applied, for the first time, to the analysis of the conduction-band structure of GaAs-Al0.4Ga0.6As quantum wires which are parallel to the [110] orientation. The results indicate that the effective mass of electrons parallel to the quantum wires is about 1.45 times as large as that of bulk GaAs. This increased effective mass reduces the electron mobility of the quantum wire at low temperature compared to the value which has been expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103491
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical-vapor selective growth (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss measurement results of the exciton radiative lifetime in GaAs quantum wires grown by metalorganic chemical-vapor selective growth technique at 9 K. By changing the lateral width of the quantum wires in the range of 7–35 nm systematically, the lateral width dependence of the radiative exciton lifetime was measured. The results show that the measured lifetime increases from 260 to 422 ps with the decrease of the lateral width from 25 to 7 nm. This increase of the radiative lifetime can be explained by taking account of both reduced exciton coherence length and spreading of the wave function of electrons in the barrier region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111866
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate enhanced and inhibited spontaneous emission effects in a vertical λ-microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A(ring), measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A(ring) QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ-microcavity mode is tuned to the quantized band-gap energy of the 76 A(ring) QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band-gap energy of the 114 A(ring) QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104918
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of vertical-microcavity quantum wire lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2200-2202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strained InGaAs quantum wire laser with a vertical microcavity structure was fabricated for the first time. In this laser structure, quantum wires with a lateral width of about 10 nm were grown by a selective metalorganic chemical vapor deposition technique. The length of the microcavity was 4λ(λ=883 nm), with AlAs/AlGaAs distributed Bragg reflectors. The cavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77 K by optical pumping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111672
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  • 10
    Electronic Resource
    Electronic Resource
    GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2495-2497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on in situ fabrication and the photoluminescence spectra of pyramid-shaped GaAs dot structures grown on (100) GaAs substrates using selective epitaxial growth by metalorganic chemical vapor deposition. The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In addition, energy change of magnetophotoluminescence spectra demonstrates the enhancement of exciton binding energy due to lateral confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111577
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