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  • 1
    Electronic Resource
    Electronic Resource
    Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1826-1831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The irreversible isothermal annealing of the as-deposited defects of hydrogenated amorphous silicon, a-Si:H, deposited at room temperature by concentric-electrode radio-frequency glow discharge is studied using dark and photoconductivity, space-charge limited current, and time-of-flight. The photoconductivity increases as a power law of the annealing time with exponent 0.8. The density of states at the Fermi level, measured by space-charge limited current, is inversely proportional to the annealing time. These results are compatible with bimolecular annealing kinetics. The dark conductivity obeys a Meyer–Nelder rule during the isothermal anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353167
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3981-3989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, hydrogenated amorphous silicon (a-Si:H) is deposited at room temperature by rf glow discharge at a high deposition rate using a tubular reactor with cylindrical symmetry (concentric-electrode plasma-enhanced chemical vapor deposition, CE-PECVD). Using the novel CE-PECVD design, room-temperature deposition of a-Si:H with growth rates up to 14 A(ring) s−1, low hydrogen concentration ((approximately-less-than)10%), and the bonded hydrogen in the Si-H monohydride configuration, is achieved for the first time using an rf glow-discharge technique. The influence of the deposition parameters (silane flow rate, pressure, and power density) on the growth rate, optical band gap, and silicon-hydrogen bonding configuration, is quantitatively predicted using a deposition mechanism based on the additive contribution of three growth precursors, SiH2, SiH3, and Si2H6, with decreasing sticking coefficients of 0.7, 0.1, and 0.001, respectively. The low hydrogen concentration is due to the enhanced ion bombardment resulting from the concentric electrode design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350870
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3990-3996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High band gap, device-quality, hydrogenated amorphous silicon (a-Si:H) was deposited from silane at room temperature using concentric-electrode plasma-enhanced chemical vapor deposition (CE-PECVD). Increasing the flow of silane from 15 to 99 sccm resulted in a continuous increase of the optical band gap, Eopt, from 1.7 to 2.1 eV, and changed the dominant bonding configuration from Si-H to Si-H2. The total hydrogen concentration as determined from the integrated absorption of the SiHx stretching bond increased from 7% to 15%. As Eopt varied between 1.7 and 2.1 eV, the photoconductivity, σph, decreased from 10−5 to 10−7 Ω−1 cm−1 and the dark conductivity, σd, dropped from 10−10 to 10−14 Ω−1 cm−1 (σph and σd measured at room temperature after a 1 h anneal at 200 °C). These results are superior to those obtained using a-SiC:H alloys deposited under comparable conditions (i.e., without hydrogen dilution). After annealing, three different conduction paths were identified and correlate with the silicon-hydrogen bonding configuration. The photosensitivity of high band gap a-Si:H films, σph/σd, follows Slobodin's rule for a-SiGe:H alloys. High band gap a-Si:H deposited by CE-PECVD has significant potential to challenge the role of a-SiC:H as the choice material for films with 1.7 (approximately-less-than) Eopt (approximately-less-than) 2.1 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350871
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  • 4
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4814-4819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60° misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff'' distance for dislocation interactions in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350623
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  • 5
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum chemical-vapor-deposited SiGe thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4820-4825 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal relaxation of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition was studied by annealing the films for times up to 21/2 h at a temperature of 950 °C. Strain relaxation was determined by misfit dislocation density obtained by planar-view transmission electron microscopy and by double-crystal x-ray diffractometry. When the relaxation process requires relatively few dislocations ((approximately-less-than)2 μm), the films relax to a remnant strain which is in agreement with previous experimental measurements; however, when higher densities of misfit dislocations were generated, substantially larger remnant strains were observed. This is interpreted as resulting from energetic interactions among the dislocations and analyzed in terms of the theory developed previously. It is found that the cutoff distance for dislocation interactions is substantially greater than the film thickness and a value of 1.4±0.5 μm is determined for 75–150-nm-thick films. Limited data from the literature also indicate a cutoff distance that is substantially in excess of the film thickness. In addition, as the annealing time is increased, a marked propensity for dislocation banding is observed, attesting to the mixed nature (attractive and repulsive) of the interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350624
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing studies of low-temperature-grown GaAs:Be (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1699-1707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 °C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from 1016 to 1019 cm−3. Electrical measurements of as-grown material up to the highest Be concentration of 1019 cm−3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of AsGa-related native donor defects present in LTMBE material. The concentration of AsGa-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3×1019 cm−3. A distinct annealing stage at 500 °C, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of AsGa-related defects. A second annealing stage near 800 °C corresponds to the activation of Be acceptors. The presence of gallium vacancies VGa was investigated by slow positron annihilation. Results indicate an excess concentration of VGa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of AsGa-related defects gives an activation energy of 1.7±0.3 eV. The defect removal mechanism is modeled with VGa-assisted diffusion of AsGa to As precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351200
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  • 7
    Electronic Resource
    Electronic Resource
    Muon-spin-relaxation study of magnetism in ErBa2Cu3O6.2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5055-5057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The copper magnetism of ErBa2Cu3O6.2 is examined by transverse-field (TF) and zero-field (ZF) muon-spin relaxation (μSR). These data indicate two magnetic phases with TN1(approximately-equal-to)330 K and TN2∼65 K. The second phase is signaled by deviation of the ZF-μSR frequencies from a standard magnetization curve and an abrupt change in the TF-μSR relaxation rate. A relaxation feature indicates a muon depolarization mechanism with a T3/2 dependence in the low-temperature phase. Observed fields are compared to those calculated for proposed magnetic structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344668
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of light on the DX centers in Si- and Te-doped GaAlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2469-2471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and constant temperature capacitance transient measurements have been performed on the DX centers under light illumination in GaAlAs alloys doped with Si and Te. Assuming that the effect of light is to ionize the DX centers, experimental DLTS spectra have been simulated numerically. The stimulated spectra reproduces qualitatively the spectra in Te-doped samples only. In Si-doped samples, the stimulated spectra cannot reproduce the light-induced peak reported recently by Jia et al. [J. Appl. Phys. 66, 5632 (1989)]. Our results confirm that this peak may be associated with a light-induced metastable center related to Si in GaAlAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103854
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1305-1307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of 510 °C. The segregation effect was found to be suppressed when the As4 overpressure was doubled. Ion channeling measurements are capable of differentiating the coherency of the strained InGaAs layer in the samples studied. A correlation was found between the coherency of the layer and its electrical transport property.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104344
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  • 10
    Electronic Resource
    Electronic Resource
    Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2022-2024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103005
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