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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O2 gas as the source of oxygen, YBCO films deposited initially at 600 °C for 1 min and at 745 °C for 25 min followed by deposition at 780 °C for 45 s are primarily c-axis oriented and zero resistance is observed at 89–90 K. The zero magnetic field current density at 53 and 77 K are 1.2×106 and 3×105 A/cm2, respectively. By using a mixture of N2O and O2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 °C for 1 min and than at 720 °C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4×106 and 1.2×106 A/cm2, respectively. To the best of our knowledge this is the highest value of critical current density, Jc for films deposited by MOCVD at a substrate temperature as low as 720 °C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N2O and O2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3887-3892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excellent shallow p+n junctions have been formed by implanting BF+2 ions into thin polycrystalline Si films and subsequent annealing. The samples implanted with 5×1015 cm−2 at 50 keV show a leakage of 1 nA/cm2 and a junction depth of about 0.05 μm after a 800 °C annealing. Various implant and annealing cases were examined to determine and characterize their effects on the resultant junctions. High energy implantations (125 and 150 keV) exhibit poor characteristics at all annealing temperatures because the Si substrates are severely damaged. However, the specimens implanted below 100 keV result in excellent diode characteristics for all implantation doses after an 800 °C annealing since the implantation defects are confined in the poly-Si layer. The major factors affecting the junction depth were found to be the implantation energy and annealing temperature, while a minor for the implantation dosage. Furthermore, the effects of the subsequent silicidation on the resultant junction characteristics were also investigated.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1217-1219 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When compared to furnace processing, for identical and lower substrate temperatures, more photons are available in the visible and ultraviolet regions for rapid isothermal processing (RIP) based on incoherent radiation as the energy source. In this letter, we provide experimental evidence for photoeffects in RIP for a wide variety of materials. As compared to furnace processed samples, rapid isothermal annealed phosphosilicate glass films on Si substrate show a higher value of refractive index, a lower flatband charge density, and a lower thermal stress. High-temperature superconducting thin films on Y-Ba-Cu-O deposited by RIP assisted metalorganic chemical vapor deposition on yttrium stabilized zirconia substrate show a larger grain size, a higher value of the transition temperature than their furnace counterpart. The microscopic understanding of a particular deposition or annealing process is necessary to take full advantage of photoeffects in RIP.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 247-249 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid isothermal processing based on incoherent sources of light is emerging as a reduced thermal budget processing technique for the fabrication of next generation of semiconductor devices and circuits. In this letter, we show that integration of the rapid isothermal processing unit and the ultrahigh vacuum deposition system provides an in situ rapid isothermal processing capability for the solid phase epitaxial growth of SrF2 and BaF2 films on (100) and (111)InP. We also show that neither as-deposited nor ex situ annealed films show solid phase epitaxial growth.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1567-1569 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar strain in CaF2 films on (111) Si substrate has been measured by an x-ray double-crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1562-1565 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High throughput, low-temperature deposition, sharp interfaces, and selective deposition with direct ion-, electron-, and photon-beam-controlled techniques are some of the key driving forces for the development of superconducting thin films by metalorganic chemical vapor deposition (MOCVD) technique. In this paper we report on the electrical and structural properties of Y-Ba-Cu-O (YBCO) films deposited by MOCVD on yttrium-stabilized zirconia (YSZ) and BaF2/YSZ substrates using a single-step in situ processing method which requires no further annealing. YBCO films deposited on BaF2/YSZ substrates have zero resistance at 80 K. The films were characterized by energy dispersive x-ray analysis, x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The films on BaF2/YSZ substrates exhibited textured growth having both the c and a axis perpendicular to the substrate. The use of BaF2 as a buffer layer suggests three-dimensional integration of high-temperature superconducting thin film for hybrid superconductor/semiconductor devices as well as superconductor switches and other related devices.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3764-3766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High throughput, sharp interfaces, and selective deposition with direct ion-, electron-, and photon-beam-controlled techniques are some of the key driving forces for the development of superconducting thin films by the metalorganic chemical vapor deposition technique. In this paper, we report on the in situ deposition of a buffer layer of BaF2 and high-temperature superconducting thin films of Y-Ba-Cu-O by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. These films have an on-set temperature of 90 K and zero resistance at 73 K. The use of BaF2 as a buffer layer on Si substrates suggests the possibility of three-dimensional integration with high-temperature superconducting thin films, for hybrid superconductor/semiconductor devices as well as superconducting switches and other related devices. To the best of our knowledge, this is the first report of the deposition of high-temperature superconducting thin films on Si by MOCVD.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6411-6414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Urological research 18 (1990), S. 193-196 
    ISSN: 1434-0879
    Keywords: Benign prostatic hypertrophy ; Prostatic atypical hyperplasia ; Adenocarcinoma of the prostate ; Immunohistopathology
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary In an effort to better distinguish the morphologic relationship of atypical hyperplasia of the prostate to benign prostatic hypertrophy and prostatic cancer, 43 prostate specimens were analyzed with ten immunohistologic markers. Two cytokeratin antibodies appeared useful (Cyto M and Cyto P, with the latter slightly more discriminatory). In summary, it appears that atypical hyperplasia is immunohistopathologically related to both benign prostatic hypertrophy and prostatic cancer, having characteristics of both.
    Type of Medium: Electronic Resource
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