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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of Y-Ba-Cu-O superconducting thin films using BaF2 as a buffer layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2479-2480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of barium fluoride (BaF2 ), used as a buffer layer between the substrate and the superconducting films, dramatically improve the properties of Y-Ba-Cu-O (YBCO) superconducting films deposited by metalorganic chemical vapor deposition on yttrium-stabilized zirconia (YSZ) substrates. For the as-deposited films at a substrate temperature of 780 °C, the observed transition temperature Tc of 80 K on the BaF2 /YSZ structure represents the highest value reported to date. By using BaF2 buffer layers, superconducting films formed by using a paste of the YBCO powder and a binder, on BaF2 /Si provided a Tc of 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101541
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal budget consideration in rapid isothermal processing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid isothermal processing (RIP) based on incoherent radiation as the source of thermal and optical energy is emerging as a key low-thermal budget processing technique. Because of high heating and cooling rates, the RIP cycle generally refers to processing time and temperature. In this letter, we have shown that the properties of materials and devices fabricated by RIP depends on the heating and cooling rates. Optimized heating and cooling rates can minimize unwanted phenomena (e.g., higher thermal stress, warpage, etc.) leading to the improved performance of the devices fabricated by RIP. To demonstrate this significance of heating and cooling rates, we report the wafer dimensional analysis results for ramp rates of 15, 75, 100, 150, and 200 °C per second at a maximum steady-state temperature of 1050 °C. Plasma and low-pressure chemical vapor deposition silicon nitride films on 6-in. wafers were studied for warpage. The BF2 and As implanted wafers at a fixed dose of 8×1015/cm2 were studied for slow (15 °C per second) and fast (200 °C per second) ramp rates. We also present stress, secondary ion mass spectroscopy, and diode leakage current results for different RIP cycles of interest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111165
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of wafer bow and warpage on the integrity of thin gate oxides (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3428-3430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of initial wafer bow and warpage on the integrity of thinner gate oxides grown by both furnace and rapid thermal processing (RTP) methods. There is evidence of a correlation between wafer warpage and bow to the charge-to-breakdown characteristics of the gate oxide. An almost linear increase in defect density was observed when plotted as a function of increasing wafer warpage. The lifetime (t50%) of the samples with initial warpage of 10 μm or less is reported higher than those with initial warpage of more than 60 μm for both furnace and RTP-grown oxides. The value of bow for the warped samples was taken for cases with the highest positive and negative values so both kinds of shape trends could be investigated. With initial wafer warpage ranging from 4 to 70 μm, we present the results of wafer dimensional analysis and correlate these to defect density and lifetime studies for thin gate oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111231
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  • 4
    Electronic Resource
    Electronic Resource
    Reduced thermal budget processing of Y-Ba-Cu-O films by rapid isothermal processing assisted metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2418-2422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O2 gas as the source of oxygen, YBCO films deposited initially at 600 °C for 1 min and at 745 °C for 25 min followed by deposition at 780 °C for 45 s are primarily c-axis oriented and zero resistance is observed at 89–90 K. The zero magnetic field current density at 53 and 77 K are 1.2×106 and 3×105 A/cm2, respectively. By using a mixture of N2O and O2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 °C for 1 min and than at 720 °C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4×106 and 1.2×106 A/cm2, respectively. To the best of our knowledge this is the highest value of critical current density, Jc for films deposited by MOCVD at a substrate temperature as low as 720 °C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N2O and O2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348675
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  • 5
    Electronic Resource
    Electronic Resource
    Comparative study of phosphosilicate glass on (100) silicon by furnace and rapid isothermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 367-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing experiments were carried out on phosphosilicate glass (PSG) films deposited on (100) silicon substrates by using a low-pressure chemical vapor deposition technique. Rapid isothermal processing and conventional furnace heating were used to study the electrical, structural, and mechanical characteristics of these films and the results of the two processes compared. A refractive index of 1.457 was obtained in the rapid isothermal annealing cycle of 800 °C/15S, but was 1.419 for the furnace annealing cycle (i.e., 800 °C/65S). Spreading resistance analysis has shown that the junction depth remains unchanged for an 800 °C/15S rapid isothermal annealing cycle. Stress measurements show that rapid isothermal annealing leads to less strain compared to furnance annealing. The x-ray photoelectron spectroscopy analysis shows that as compared to furnance annealing, rapid isothermal annealing provides a chemically homogenous interface. High-frequency capacitance voltage (C-V) measurements show that furnance-annealed samples are leaky and a higher concentration of oxygen-related defects are present in the PSG/Si interface. On the other hand, because of a relatively clean interface, a well behaved C-V characteristic is observed in the rapid isothermal annealed samples. In summary, as compared to furnace annealing, rapid isothermal annealing resulted in superior structural, mechanical, and electrical properties of PSG films on Si substrates. A plausible explanation of such behavior may be attributed to the difference in the radiation spectra of the two sources of energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347723
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  • 6
    Electronic Resource
    Electronic Resource
    Role of in situ rapid isothermal processing in advanced III-V technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3857-3861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid isothermal processing (RIP) based on incoherent sources of light is emerging as a reduced thermal budget (product of processing time and temperature) processing technique. As compared to stand alone annealing unit, the in situ RIP unit is very attractive for the next generation of devices. A number of unwanted physical phenomena can be suppressed or completely eliminated in the in situ RIP case leading to improved quality of materials when compared to their ex situ rapid isothermal annealed and furnace annealed counterparts. We have used in situ rapid isothermal processor for the in situ rapid isothermal chemical cleaning of InP and GaAs substrates and in situ metallization of InP and GaAs Schottky diodes. As compared to ex situ annealing, the negligible oxygen content at the surface and interface of in situ RIP samples result in better current-voltage characteristics, lower and compressive stress values, as well as smooth and continuous morphologies of the ohmic contact. In this paper, we have highlighted the role of in situ RIP in the metallization of InP and GaAs devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349191
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  • 7
    Electronic Resource
    Electronic Resource
    Structural properties of (100) BaF2 on (100) InP grown by in situ rapid isothermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6411-6414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345165
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  • 8
    Electronic Resource
    Electronic Resource
    Relationship between thermal stress and structural properties of SrF2 films on (100) InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1239-1241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measurement of thermal stress of SrF2 films on InP as a function of temperature is presented. The in situ and ex situ rapid isothermal annealed films have different values of thermal stress at room temperature and show entirely different behavior of thermal stress during heating and cooling cycles. X-ray photoelectron spectroscopy measurements were used to characterize the surface of the SrF2 films as well as the SrF2/InP interface for both the ex situ and in situ annealed films. It is shown that the difference in the microstructure of in situ and ex situ rapid isothermal annealed SrF2 films on InP is indeed reflected in the significant difference in the thermal stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103496
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  • 9
    Electronic Resource
    Electronic Resource
    Role of in situ rapid isothermal processing in the solid phase epitaxial growth of II-A fluoride films on (100) and (111) InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 247-249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid isothermal processing based on incoherent sources of light is emerging as a reduced thermal budget processing technique for the fabrication of next generation of semiconductor devices and circuits. In this letter, we show that integration of the rapid isothermal processing unit and the ultrahigh vacuum deposition system provides an in situ rapid isothermal processing capability for the solid phase epitaxial growth of SrF2 and BaF2 films on (100) and (111)InP. We also show that neither as-deposited nor ex situ annealed films show solid phase epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103283
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  • 10
    Electronic Resource
    Electronic Resource
    Erratum: Role of in situ rapid isothermal processing in the solid phase epitaxial growth of II-A fluoride films on (100) and (111) InP [Appl. Phys. Lett. 56, 247 (1990)] (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1808-1808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103337
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