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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 1228-1235 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present valence effective Hamiltonian (VEH) calculations on the optical absorptions of a series of phthalocyanine compounds: the metal-free phthalocyanine molecule, a model system for the lithium phthalocyanine molecule, the metal-free phthalocyanine dimer, and model systems for the lutetium diphthalocyanine and the lithium phthalocyanine crystal. For these compounds, it is found that the major factor influencing the evolution of the optical transitions is not the electronic structure of the metal but rather the geometric structure: phthalocyanine intraring geometry and, in the dimers and crystals, interring separation and staggering angle. The origin of the so-called Soret or B absorption band is calculated to be significantly more complex than was previously thought on the basis of the simple four-orbital model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3324-3327 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field effect transistors (FETs) have been fabricated with metal phthalocyanines and rare earth diphthalocyanines. The influence of the metallic ion in mono- and diphthalocyanines and the conditions of FET fabrication on electrical characteristics has been determined for devices tested in ambient atmosphere. Aging under various conditions has identified the role of oxygen on the device behavior. Unlike conventional inorganic FETs, these diphthalocyanine based devices work through the modulation of an accumulation layer formed by majority carriers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 66-69 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary ion mass spectrometry correlated with ionic implantations has allowed us to determine oxygen bulk concentration in scandium diphthalocyanine thin films. This concentration, around 2×1020 atom cm−3, increases by a factor 20–25 in implanted areas. This oxygen enhancement is observed for oxygen implantation but as well for xenon, caesium, or iodine implantation, and therefore is not dependent on the nature of the implanted atoms. The oxygen concentration saturates in the damaged region but its quantity depends on the energy loss and on the fluence; the larger the damaged layer, the larger the region where the enhancment takes place. The phenomenon will be tentatively related to the creation of free radicals induced by bond breaking occurring during the implantation process.But, other explanations including more severe degradations of the molecular material cannot be dismissed.
    Type of Medium: Electronic Resource
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