Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (9)
  • 1
    Electronic Resource
    Electronic Resource
    An algorithm of finite element grid generation for three-dimensional complex connected domain (1993)
    Springer
    Acta mechanica solida Sinica 6 (1993), S. 59-67 
    Details
    ISSN: 0894-9166
    Keywords: finite element grid ; complex connected domain
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An automated quasi three-dimensional finite element grid generation method is presented for particular three-dimensional complex connected domain, across which some are simply connected two-dimensional.regions and some are multiply connected two-dimensional regions. A subdivision algorithm based on the variational principle has been developed to ascertain the smoothness and orthogonality of the generated grid in any cross sections. Smooth transition between the simply and multiply connected regions is maintained. For illustration, the method is applied to generate a finite element three-dimensional grid for human above knee stump.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02207814
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Induction of myceliogenic germination of sclerotia of Sclerotinia sclerotiorum by exposure to sub-freezing temperatures (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Plant pathology 40 (1991), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: When sclerotia of a Canadian isolate of Sclerotinia sclerotiorum were exposed to temperatures of – 10 or– 20 C for 4 weeks, their germination behaviour changed from carpogenic to myceliogenic type. Mycelial growth from sclerotia exposed to– 20 C was more vigorous than that from sclerotia exposed to– 10 C. The mode of germination in sclerotia treated with above-freezing temperatures of 0 5, 10. 15. 25 or 30 C did not change: they retained the capacity for carpogenic germination. The possible epidemiological impact of this low-temperature induction of myceliogenic germination on the development of sclerotinia wilt of sunflower seedlings in western Canada is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.1991.tb02427.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Simulation and analysis of silicon electro-optic modulators utilizing the carrier-dispersion effect and impact-ionization mechanism (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1521-1528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of Si guided-wave electro-optic modulator is proposed and analyzed. The modulator makes use of the impact-ionization mechanism for carrier generation, and the carrier-dispersion effect for electro-optic conversion. Both electrical and wave propagation properties of the modulator were examined by a two-dimensional device simulator and a three-dimensional waveguide simulator, respectively. Numerical estimates of phase modulation due to refractive-index change and intensity modulation due to optical absorption and radiation loss were obtained. One of important features of the prospected modulator is speed. The simulated turn-on and turn-off time of the modulator was less than 1 ns. GHz modulation is, therefore, possible for this class of modulators with device structure and doping profiles optimized for fiber coupling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354851
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Change in refractive index for p-type GaAs at λ=1.06, 1.3, and 1.55 μm due to free carriers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 925-929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-mechanical approach used to calculate the refractive-index change Δn due to free carriers for various doped p-type GaAs is presented. The approach makes use of a numerical Kramers–Kronig analysis to analyze a carrier-related optical-absorption spectrum in which various important carrier effects have been considered including the band-filling effect, the band-tailing effect, the band-gap-shrinkage effect, the direct optical transition of carriers between subvalence bands, and the indirect intravalence-band absorption due to phonons and impurities. Values of Δn have been obtained for various doping and carrier concentrations at wavelength λ=1.06, 1.3, and 1.55 μm. These Δn data are directly applicable to both the injection- and depletion-type optical-switching and modulation applications, and the optical-probing application. A comparison of various index-changing effects for GaAs at wavelength λ=1.06, 1.3, and 1.55 μm is also listed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349600
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 791-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We hereby report a silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules. The particular feature of the fabrication is that a mode modulation technique is utilized. This technique changes intensity confinement of the propagation modes of a silicon partial waveguide such that an intensity modulation is achieved. Modulation indices of greater than 15% have been observed with a forward-bias current of 24 mA and a modulation length of 3 mm. By reducing the core width of the modulator, the modulation index can be further increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351813
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Quantum calculations of the change of refractive index due to free carriers in silicon with nonparabolic band structure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2033-2039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-mechanical approach used to calculate the change of refractive index, Δn, due to free carriers in various doped silicon is presented. This approach uses a numerical Kramers–Kronig relation to analyze a calculated carrier-related absorption spectrum below or near the energy-band gap. The absorption spectrum is obtained by considering the optical transitions between energy bands and impurity bands, and the free-carrier absorption due to acoustic phonons, optical phonons, and ionized impurities in a spherical nonparabolic band model. Values of Δn at wavelength λ=1.3 and 1.6 μm for different doping levels are obtained. The results are applicable to both the integrated-optics applications and optical-probing applications in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345586
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The carrier effects on the change of refractive index for n-type GaAs at λ=1.06,1.3, and 1.55 μm (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1497-1503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical Kramers–Kronig analysis is used to calculate the refractive-index change Δn caused by the injection/depletion of free carriers in various doped n-type GaAs. The analysis makes use of a carrier-related absorption spectrum, which is established by using quantum theory as well as empirical relations and is confirmed by the experimental absorption data in the literature. We obtain the Δn values for various doping concentrations ND and carrier concentrations N at three wavelengths; λ=1.06, 1.3, and 1.55 μm. The Δn value is positive for low-N region, and increases gradually to its maximum which is around 10−4 for λ=1.06 μm. Thereafter, Δn decreases rapidly to 0 as N increases. The linear relation between Δn and N, as predicted by the Drude theory, only happens when N is beyond a certain value. In this region, the Δn value may attain to −10−2 at N=5×1018 cm−3 for λ=1.55 μm. Because of this significant Δn value and its linear relation with N, the free-carrier induced index-change effect may find the applications in integrated optics and optical probing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345658
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Analytical and computational models of shells (CED-Vol. 3), edited by Ahmed K. Noor, Ted Belytschko and Juan C. Simo, The American Society of Mechanical Engineers, New York, 1989. No. of pages: 640 (hard bound). ISBN 0-7918-0373-2. Price: $95.00 (1991)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 32 (1991), S. 215-215 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620320116
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Finite element analysis of heat transfer and flow problems using adaptive remeshing including application to solidification problems (1991)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 32 (1991), S. 767-781 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: An error estimation technique for adaptive finite element analysis of heat conduction problems is described. The performance of this technique is demonstrated using a two-dimensional steady-state linear benchmark problem with a known analytical solution. A transient non-linear heat conduction problem involving solidification is then solved as a typical practical application. Some preliminary investigations for error indicators in flow problems are presented.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620320408
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...