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  • 1990-1994  (6)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs: Comparison of transparent- and loss-type structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3189-3193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Distributed Bragg reflectors (DBRs) for the visible-light spectral region constructed by InAlP/InGaAlP pairs and InAlP/GaAs pairs, grown by metalorganic chemical-vapor deposition, have been investigated with the point of comparing optical and structural properties. In the case of the InAlP/InGaAlP stacked type, a reflectivity above 80% has been realized; however, the bandwidth decreased by shortening the peak wavelength. The reflection spectrum of the InAlP/GaAs DBR showed a wide-band characteristic and provided a relatively high reflectivity to the green region in spite of the absorption loss of the GaAs layers. These results were in good agreement with theoretical calculations considering the absorption loss and refractive index of individual stacked layers. These DBRs have also been confirmed to have good uniformity and periodicity through cross-sectional transmission electron microscopy and x-ray rocking curve analysis. Good electrical conductivity through these DBRs has been obtained for the n-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354589
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-temperature continuous operation above 200 °C of GaAs lasers using an InGaAlP cladding layer (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2176-2178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new GaAs laser diode employing InGaAlP for the cladding layer has been successfully fabricated. A large band-gap difference between the GaAs active and InGaAlP cladding layers reduced the electron overflow, which drastically improved the temperature characteristics. The highest temperature continuous wave operation of 212 °C was obtained. A large characteristic temperature, T0 of 190 K was maintained up to 140 °C. Any significant problem due to a heterointerface of GaAs/InGaAlP including high Al composition was not observed through the laser characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109460
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1718-1719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 μm) and asymmetry coatings have been fabricated. The high light-output power operation with this heterobarrier blocking structure was investigated. The light-output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high-power operation such as 20 mW was maintained at 40 °C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high-light output power operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103125
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    High-temperature operation of high-power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 149-151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power and high-reliable operation of transverse-mode stabilized InGaAlP laser diodes has been achieved by a selectively buried ridge waveguide structure with a thin (0.02 μm) active layer. A composition-shifted In0.5+δGa0.5−δP active layer was employed in order to improve the temperature characteristic. A maximum cw light output power of 54 mW was obtained for the laser with antireflection and high-reflection coatings. A high-power cw operation above 30 mW output power was maintained even at a 60 °C heat-sink temperature. Stable cw operation exceeding 1000 h has been achieved for 20 mW output power at 50 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106002
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    High-brightness InGaAlP green light-emitting diodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Candela class InGaAlP surface-emission green light-emitting diodes (LEDs) have been successfully fabricated. The growth of InGaAlP on an intentionally misoriented substrate improved emission properties, as confirmed by a quantitative estimation of the diffusion length in the active material. A Bragg reflector using InGaAlP was realized for the first time. A new device structure, including this Bragg reflector, drastically improved the light extraction efficiency. An external quantum efficiency of 0.7% at 573 nm green light was obtained, corresponding to a luminous intensity of 2 cd.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108423
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first atomic images of the hydrogen terminated Si(111) surface have been acquired in aqueous sulfuric acid solutions. The observed interatomic distance with threefold symmetry is ∼3.8 A(ring), indicating that the ideal Si(111):H-1×1 surface can be prepared by chemical etching in NH4F solutions. It is demonstrated that in situ scanning tunneling microscopy is an extremely important method for revealing chemical processes with atomic resolution in the chemical etching of semiconductors in solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106904
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    Paper (German National Licenses)
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