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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion channeling studies on epitaxially grown a-axis YBa2Cu3O7−δ films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1051-1053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure of a-axis oriented YBa2Cu3Ox (YBCO) films epitaxially grown on SrTiO3 (100) was investigated by ion channeling measurement. The lattice constant in the film plane was determined from the channeling angle through [110]/[103] angular scan measurements and a-axis lattice constant measured by the x-ray diffraction technique. The lattice constants of the a axis decreased with increasing film thickness, while the obtained lattice constants in the film plane revealed the close values to the lattice constant of the SrTiO3 substrate (3.905 A(ring)). The relaxation of film strain was evaluated from the χ values estimated from [110]/[103] ion channeling. The χ values increased from 16.7% to 26.4% with increasing film thickness from 500 to 3500 A(ring). The effect of the strain relaxation on the superconductivity was confirmed for a-axis oriented YBCO films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112149
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of c-axis in-plane YBa2Cu4O8 thin films through in situ annealing of precursors deposited by hybrid plasma sputtering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Processing for the growth of YBa2Cu4O8 (Y124) thin films has been investigated by dc 94.92 MHz hybrid plasma sputtering with in situ annealing. The amorphous precursor is found to be the best candidate for growing pure Y124 phase through in situ annealing. The Raman spectrum confirms the Y124 phase by presenting the modes at 250 and 604 cm−1 related to the double Cu-O chains. X-ray diffraction as well as transmission electron microscopy further show that the films are composed of grain with orthogonal c axes in the film plane. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112493
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Direct high-resolution electron microscopy observations of sputtered a-axis oriented YBa2Cu3O7 films prepared by a self-template method on SrTiO3 substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3334-3336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A-axis oriented YBa2Cu3O7 films grown on a SrTiO3 substrate with and without the template layer have been studied by high-resolution electron microscopy. The self-template layer was found to be very effective to obtain highly crystalline a-axis oriented YBa2Cu3O7 film. A disordered cubic perovskite structure with a lattice parameter of 3.85 A(ring) was found in the template layer which could be a good seed for further growth of a-axis film. In the film without the self-template layer, YBa4Cu3Ox cubic perovskite with lattice parameter 4.08 A(ring) was observed to have grown at the interface as an island growth. Moreover, some faulted c-axis film at the very beginning of the template layer was observed even at the rather lower deposition temperature of 640 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111270
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Direct current-94.92 MHz hybrid plasma magnetron sputtering for fabrication of YBa2Cu3O7−x thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 312-314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x thin films have been prepared using a newly designed dc-94.92 MHz hybrid plasma magnetron sputtering system. The cathode current affected the crystalline orientation of the films as well as the deposition rate. Optical emission spectroscopic studies of this plasma indicate that the intensities of the emission lines from the ions increase with the increasing cathode current. The films showed an excellent crystallinity with the a-axis being perpendicular to the plane of the substrate; a full width at half-maximum value of 0.027° was measured for the (200) peak from the rocking curve measurement. The crystallinity of films has reached the level for the first time where the crystallinity essentially depends on the crystallinity of the substrate used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108971
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and superconductivity of c-axis in-plane aligned YBa2Cu3O7−x films fabricated by the self-template method (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane aligned a-axis oriented and [110] oriented Y1Ba2Cu3O7−x (YBCO) films exhibiting different anisotropic ratio in resistivity were fabricated, respectively, on LaSrGaO4[100] and SrTiO3[110] substrates by the self-template method. The anisotropic properties of the a-axis films as studied by resistivity and thermoelectric power measurements are believed to reflect the anisotropy intrinsic to the YBCO system. The measured anisotropic properties of the a-axis films exhibiting anisotropy ratio (approximately-greater-than)8 in resistivity and of the as-deposited [110] films were found to be related to cracks and the rough surface of these films. Furthermore, high-resolution microscopy revealed that a-axis film growth by our self-template method is dependent on the kinetics of the deposition process. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112458
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    Paper (German National Licenses)
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