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  • 1
    Electronic Resource
    Electronic Resource
    In-situ diagnostics for plasma surface processing (1993)
    Springer
    Applied physics 56 (1993), S. 479-492 
    Details
    ISSN: 1432-0630
    Keywords: 57.70.−m ; 81.15.Gh ; 81.60.−j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A survey is given of in-situ diagnostics of plasma and surface for application in plasma etching and deposition. Especially those diagnostics that increase the fundamental understanding of the elementary processes occurring both within the plasma and at the surface are highlighted. In general, diagnostics are performed to determine the value of a physical parameter. This value is fed into models of plasma or surface, and in that way the understanding of the process is enhanced. In the paper first the most interesting physical parameters are defined. Subsequently the diagnostic techniques currently available to determine those parameters are reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331399
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of particulates in a rf plasma by laser evaporation and subsequent discharge formation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2959-2961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd:YAG-laser-induced evaporation of particulates formed in an Ar-CCl2F2 rf plasma and the subsequent discharge in the vapor have been investigated in situ by means of optical emission spectroscopy. The estimated threshold for discharge formation is 5×106 W/cm2. The maximum laser-induced emission intensity is observed when the laser is operated in the long-pulse mode (about 200 μs pulse duration) at the fundamental frequency. The wavelength integrated intensity of this continuum emission has been compared with light scattering intensity at the same laser energy. It has been found that the laser-induced emission intensity can be more than ten times higher than the scattering intensity, especially for particulates with a diameter much smaller than the wavelength of the laser. Therefore, this effect provides a sensitive particulate detection method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354603
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  • 3
    Electronic Resource
    Electronic Resource
    Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8017-8026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index of SiGe alloys at 632.8 nm has been measured as a function of the Ge concentration using in situ ellipsometry while the material is slowly removed from a silicon substrate using reactive-ion etching (RIE). Homogeneous, strained epitaxial SiGe films on silicon substrates were used. The Ge concentration was obtained by Rutherford backscattering. If an unknown SiGe structure is etched with RIE, in situ ellipsometry yields combinations of the ellipsometric angles Ψ and Δ with time. Starting at the Si substrate, these points are, on a point-to-point basis, converted into combinations of complex refractive index and depth in a numerical procedure. For this inversion of the ellipsometry equations, the known relation between the real and the imaginary part of the refractive index of SiGe is used. Finally the refractive indices are converted into Ge concentrations. Thus the depth profile of the Ge concentration in an unknown epitaxial SiGe structure can be inferred from an in situ ellipsometric measurement during RIE of the unknown structure. The obtained resolutions in depth and Ge concentration are 0.3 nm and 0.3%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353916
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  • 4
    Electronic Resource
    Electronic Resource
    Measurements of negative ion densities in 13.56-MHz rf plasmas of CF4, C2F6, CHF3, and C3F8 using microwave resonance and the photodetachment effect (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3472-3480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-power density of a frequency quadrupled pulsed Nd-YAG laser has been used to photodetach electrons from negative ions in rf plasmas generated within a microwave cavity. Negative ion densities have been determined by measuring the frequency shift of the resonance transmission, the shift being caused by the photoelectrons created by irradiating the plasma with the laser pulse. By measurement of the shape of the resonance curve as a function of time and of microwave frequency, and consecutive fitting of a parabola to the top of the resonance curve, the negative ion density has been determined as a function of gas pressure, rf power, and position in the plasma. Measurements were performed in plasmas of CF4, C2F6, CHF3, and C3F8. The results indicate that the negative ion densities are about one order of magnitude larger than the electron density, which is in good agreement with a fluid model calculation. The pressure and power dependence of the electron density and of the negative ion density gives insight in the relation between the electron temperature and the macroscopic plasma parameters. Measurements as a function of the laser wavelength, using a pulsed dye laser, show that in CF4 the negative ions mainly consist of F−, whereas in C2F6 significant densities of other negative ions may occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350346
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  • 5
    Electronic Resource
    Electronic Resource
    Temporal behavior of the electron and negative ion densities in a pulsed radio-frequency CF4 plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2939-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron and negative ion densities in the afterglow and in the plasma initiation phase of a 13.56-MHz rf discharge in CF4 were measured by using a microwave cavity method and a laser photodetachment technique. Measurements were carried out at low rf powers ((approximately-less-than)10 W) and in the pressure range from 100 to 300 mTorr. The electron density in the afterglow showed an enhanced decay rate due to the presence of negative ions. Electrons originating from negative ions through associative collisional detachment with neutral radicals were also detected in the afterglow. Decay curve analysis of the negative ion density gave an ion–ion (presumably CF+3−F−) recombination rate constant of (5±2)×10−13 m3 s−1, and showed that, in the active plasma, the negative ion loss rates by associative detachment and ion–ion recombination are of the same order of magnitude. The behavior of the electron and negative ion densities in the plasma initiation phase indicates that molecules and radicals that slowly accumulate in the plasma do not play a significant role in the production of negative ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349318
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  • 6
    Electronic Resource
    Electronic Resource
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348517
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  • 7
    Electronic Resource
    Electronic Resource
    Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107314
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  • 8
    Electronic Resource
    Electronic Resource
    Interactive effects in the reactive ion etching of SiGe alloys (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine-, chlorine-, and bromine-based low-pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine-based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is (approximately-equal-to)2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104942
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  • 9
    Electronic Resource
    Electronic Resource
    Mass-resolved ion energy measurements at the grounded electrode of an argon rf plasma (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mass-resolved ion energy distribution (IED) at the grounded electrode has been determined in a 13.56-MHz parallel-plate plasma in argon. The IED is determined of Ar+, Ar2+, Ar2+, ArH+, H3O+, and H3+ for several plasma conditions. At pressures higher than 10 mTorr, collisions in the sheath become important. The IED of Ar+ is particularly defined by charge exchange collisions in the sheath while the IED of the other ions shows only features generated by elastic scattering. This is confirmed by Monte Carlo simulations. The measurements clearly show the necessity of simultaneous mass and energy separation, rather than the nonmass-resolved IED reported in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110087
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  • 10
    Electronic Resource
    Electronic Resource
    Energy transfer from radio frequency sheath accelerated CF+3 and Ar+ ions to a Si wafer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1496-1498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal energy flux which a rf plasma delivers to a silicon surface has been studied by a calorimetric method. The energy flux appears to be proportional to the product of the average ion energy and the ion flux, which was calculated from the Bohm criterion using measured plasma parameters. Furthermore, the value and energy dependence of the kinetic energy transfer efficiency (about 0.5) suggests that the microscopic interaction of impinging ions in the eV range with a silicon surface can be described by a binary collision model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111870
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