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  • 1
    Electronic Resource
    Electronic Resource
    Gas-source molecular-beam epitaxy using Si2H6 and GeH4 and x-ray characterization of Si1−xGex (0≤x≤0.33) alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4916-4919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas-source molecular-beam epitaxy (MBE) has been used to grow SiGe alloys with Si2H6 and GeH4 as sources on (100) Si substrates. Single-crystalline epilayers with Ge composition as high as 33% have been produced at 610 °C, the lowest temperature hitherto used for gas-source SiGe MBE. Growth parameters, growth modes, and the structural characteristics have been studied by a variety of in situ and ex situ techniques. Double-crystal x-ray diffraction data for the alloys have been obtained for the first time in thin mismatched layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350639
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  • 2
    Electronic Resource
    Electronic Resource
    Donor-doping characteristics of gas-source molecular beam epitaxial Si and Si1−xGex using phosphine (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2213-2215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Well-behaved and reproducible n-type doping of Si and Si1−xGex by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017–1019 cm−3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The doping profiles are well defined in both Si and Si1−xGex layers. A p-Si0.9Ge0.1/n-Si heterojunction diode made with boron and phosphine doping has demonstrated excellent rectifying characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357636
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  • 3
    Electronic Resource
    Electronic Resource
    Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0〈x〈1) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3110-3111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall factor for holes in relaxed p-type Si1−xGex alloys has been determined from mobility measurements at magnetic fields up to 7 T at 290 K. Our data together with previously published values for Si and Ge suggest that r for holes in SiGe varies between 0.73 and 1.7 with a possible strong bowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111363
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  • 4
    Electronic Resource
    Electronic Resource
    Radical-assisted organometallic vapor-phase epitaxial growth of GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2124-2126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, radicals have been added to assist organometallic vapor-phase epitaxial (OMVPE) growth of GaAs at low temperatures. Supplemental t-C4H9 radicals from the pyrolysis of azo-t-butane [(t-C4H9)2N2] were used to increase the growth rate of GaAs from trimethylgallium [TMGa, (CH3)3Ga] and arsine (AsH3) at temperatures as low as 390 °C. Mass spectroscopy studies show that the added radicals enhance the decomposition rates of both TMGa and AsH3. The GaAs growth rate was increased by a factor of 6 at 450 °C. The radical-assisted OMVPE grown samples are, indeed, GaAs based on microprobe analysis. Spectra from Raman scattering experiments further confirm that the GaAs is single crystalline.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106100
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier velocity-field characteristics and alloy scattering potential in Si1−xGex/Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy scattering potential is an important parameter in SiGe alloys since it not only affects the velocity-field characteristics for carrier transport, but also allows increased optical transitions by relaxing k-selection rules. In this letter, we report on the velocity-field measurements for relaxed and coherently strained SiGe alloys. The alloy scattering potential is obtained from a careful fit to the data. The hole velocity at any field is found to have a bowing behavior as a function of alloy composition. This reflects a strong alloy scattering potential which is calculated to be 0.6 eV for the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109687
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  • 6
    Electronic Resource
    Electronic Resource
    Decomposition mechanisms of trimethylantimony and reactions with trimethylindium (1991)
    s.l. : American Chemical Society
    Chemistry of materials 3 (1991), S. 39-44 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00013a014
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of organic binders on the sintering of isostatically compacted zirconia powders (1992)
    Springer
    Journal of materials science 27 (1992), S. 63-67 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Certain processing-related flaws in cold isostatically pressed ceramic powder compacts may arise from the delayed burn-out of organic binders until the sintering temperature is approached, although the isostatic compaction technique usually gives a higher and much more uniform green density than the conventional die compaction technique. For the 3 mol% Y2O3-doped zirconia powder in which 3 wt% PEG 1500 was introduced, the sintered density and sintering shrinkage were found to decrease in a near linear manner with increasing isostatic compaction pressure. The processing-related defects were identified as intergranular pores (1–5 μm). It is considered that these processing-related defects are a consequence of incomplete organic burn-out at low and intermediate temperatures in the heating-up period and the swelling of intergranular pores associated with the burn-out of residual organic binders at temperatures close to the sintering temperature. A higher calcination temperature and an extended calcination dwell time may be required to eliminate the organic residuals in the isostatically pressed ceramic powder compacts than in the conventional die-pressed samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00553837
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of organic binders on the sintering of isostatically compacted zirconia powders (1992)
    Springer
    Journal of materials science 27 (1992), S. 63-67 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Certain processing-related flaws in cold isostatically pressed ceramic powder compacts may arise from the delayed burn-out of organic binders until the sintering temperature is approached, although the isostatic compaction technique usually gives a higher and much more uniform green density than the conventional die compaction technique. For the 3 mol% Y2O3-doped zirconia powder in which 3 wt% PEG 1500 was introduced, the sintered density and sintering shrinkage were found to decrease in a near linear manner with increasing isostatic compaction pressure. The processing-related defects were identified as intergranular pores (1–5 μm). It is considered that these processing-related defects are a consequence of incomplete organic burn-out at low and intermediate temperatures in the heating-up period and the swelling of intergranular pores associated with the burn-out of residual organic binders at temperatures close to the sintering temperature. A higher calcination temperature and an extended calcination dwell time may be required to eliminate the organic residuals in the isostatically pressed ceramic powder compacts than in the conventional die-pressed samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02403644
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  • 9
    Electronic Resource
    Electronic Resource
    Triplet repeats in clinical subtypes of schizophrenia: variation at the DRPLA (B37 CAG repeat) locus is not associated with periodic catatonia (1994)
    Springer
    Journal of neural transmission 98 (1994), S. 153-157 
    Details
    ISSN: 1435-1463
    Keywords: Association study ; B37 CAG repeat locus ; chromosome 12 ; schizophrenia ; periodic catatonia
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Clinical evidence for a dominant mode of inheritance and anticipation in periodic catatonia, a distinct subtype of schizophrenia, indicates that genes with triplet repeat expansions or other unstable repetitive elements affecting gene expression may be involved in the etiology of this disorder. Because patients affected with dentatorubral-pallidoluysian atrophy (DRPLA) may present with “schizophrenic” symptoms, we have investigated the DRPLA (B 37 CAG repeat) locus on chromosome 12 in 41 patients with periodic catatonia. The B 37 CAG repeat locus was highly polymorphic but all alleles in both the patient and control group had repeat sizes within the normal range. We conclude that variation at the DRPLA locus is unlikely to be associated with periodic catatonia. The evidence for dominant inheritance and anticipation as well as the high prevalence of human brain genes containing trinucleotide repeats justifies further screening for triplet repeat expansions in periodic catatonia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01277018
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  • 10
    Electronic Resource
    Electronic Resource
    Reformed bamboo and reformed bamboo/aluminium composite (1994)
    Springer
    Journal of materials science 29 (1994), S. 5990-5996 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new technique has been developed which aims at changing the form of bamboo from its natural circular cross-section into a plate for convenient use. The manufacturing technique covers three major processes: softening, compression and fixture. The microstructure of reformed bamboo was studied both qualitatively and quantitatively. The mechanical properties of reformed bamboo were tested and the results show a remarkable increase compared with normal bamboo. Although the reformed bamboo has many advantages, such as higher specific properties, inexpensive cost, etc., the composition of reformed bamboo with aluminium alloy sheets further improves the comprehensive performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00366884
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