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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6424-6426 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Ti multilayered films prepared by plasma-free sputtering revealed high coercivity. The effect of elevating substrate temperature and adding Zr and Cr into Fe and Ti layers, respectively, have been examined to increase the coercivity Hc. The elevation of substrate temperature to 200–400 °C did not bring a significant increase in Hc. Addition of Zr into Fe layers caused a soft magnetism because of the small Fe grain size. On the other hand, addition of Cr into Ti layers revealed a significant increase in Hc especially for the films with small Fe thickness lFe. Although the magnetization of Fe/Ti multilayered films with lFe of about 16 A(ring) was almost zero, that of Fe layers in Fe/Ti90Cr10 multilayered films was as large as 14 kG with a high Hc of about 400 Oe. X-ray diffractometry (XRD) implies that the small Fe grain size and the magnetic interaction between atoms at the interface may be one of the origins of such high Hc.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6489-6491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successive growth of Ba-ferrite (BaM) layer on YBa2Cu3Ox (YBCO) layer has succeeded by using facing targets sputtering (FTS) method, which is suitable for preparing oxide films. BaM layer deposited on YBCO showed clear c-axis orientation of their crystallites normal to the film plane and they could be grown successively without interdiffusion. These bilayered films showed apparent perpendicular magnetic anisotropy originated from BaM layer. Preferred c-axis orientation in BaM layer could be clearly observed when its thickness was as small as 300 A(ring).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6447-6447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It seemed to be possible to distort the Fe crystal lattice in Fe/Mn multilayers, because the atomic radii of α-Fe and α-Mn with cubic crystal lattice are 1.26 and 1.29 A(ring), respectively. It is very interesting to investigate how crystallographic and magnetic characteristics of the Fe/Mn multilayers were changed by modulating the thickness of Fe and Mn layers. In this study, 2000-A(ring)-thick Fe/Mn multilayers with sharp periodicity were deposited on plasma-free substrate Si wafer by the facing target sputtering method. The Ar gas pressure pAr was set at 2 mTorr. Deposition rates of Fe and Mn layers were 5 and 2 A(ring)/s, respectively. The thicknesses of Fe and Mn, δFe and δMn, were in the range of 20–200 A(ring) and 5–100 A(ring), respectively. The crystallites in Fe and Mn layers revealed the distinct orientation of α-Fe(110) and α-Mn(411) planes, respectively. The Fe(110) interplanar distance dFe increases from value close to Mn(411) interplanar distance dMn to that close to dFe with increase of the Fe layer thickness δFe in the range of 10–100 A(ring). The distortion of Fe crystal lattice increased with decrease of δFe and increase of interface number. The difference between the saturation magnetization 4πMs measured for the specimen multilayers and that calculated for the single layer films of simply diluted alloy increased with increase of δFe. However, 4πMs of the Fe layers in Fe/Mn multilayers did not changed with δMn except for the films with δFe as extremely small as 20 A(ring). And 4πMs took the value of nearly zero at δFe of 10 A(ring). In the range of δMn of 20–50 A(ring), the Fe lattice distortion was most remarkable and the coercivity Hc increased highly due to the large in-plane uniaxial anisotropy. Hc took its maximum value of about 70 Oe at δFe and δMn of 50 A(ring). This result may imply that the distortion of both layers are most remarkable. Consequently, it was confirmed that dFe and the crystallite size in Fe layers were changed and Hc was modified by modulating both δFe and δMn.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-Zr sputtered thin films with large perpendicular magnetic anisotropy were prepared by facing targets sputtering (FTS) apparatus. Perpendicular anisotropy was clearly observed at Zr content around 10 at. %. The substrate temperature Tsub of ∼100 °C resulted in the large perpendicular magnetic anisotropy energy Ku of 1.2 × 106 erg/cc and the high perpendicular coercivity Hc⊥ of 1.0 kOe in the Fe-Zr sputtered film with the saturation magnetization 4πMs of 6.7 kG. It was also shown that Tsub higher than 200 °C caused the decline of Ku and the lowering of 4πMs. It is concluded that Fe-Zr sputtered film may be applicable for the media in the perpendicular magnetic recording system.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6525-6527 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayers composed of 30 [Ni–Fe/Cu] bilayers deposited on a 50-A(ring)-thick Fe buffer layer were prepared by ion beam sputtering. The magnetoresistance (MR) ratio Δρ/ρ0 of the multilayers took high value at the Cu layer thickness δCu of 10, 20, and 32 A(ring) for the multilayers with Ni–Fe layer thickness δNi–Fe of 10 A(ring). It was observed that (100) orientation of Ni–Fe and Cu crystallites were enhanced at δCu of 20 and 32 A(ring). The multilayered film with δCu of 10 A(ring) exhibited Δρ/ρ0 as high as 12%. The multilayered film possessed good soft magnetic properties, and exhibited coercivity Hc and relative permeability μr of about 4 Oe and 800, respectively. The saturation magnetic field Hs was about 300 Oe. Δρ/ρ0, Hc, and Hs at δCu of 20 A(ring), i.e., at the "second peak,'' were 6%, 10 Oe, and 25 Oe, respectively. The δCu dependence of Δρ/ρ0 seemed to be correspondent to that of the preferential orientation of the (100) plane. Ni–Fe/Cu multilayers with the same construction but without an Fe buffer layer did not reveal apparent (100) preferential orientation and did not exhibit Δρ/ρ0 as high as detectable. Then, Δρ/ρ0 was strongly dependent not only on interlayer thickness, such as δCu, but also (100) crystallite orientation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6568-6570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferrimagnetic Mn4N films have been successfully prepared at low process temperatures using the facing targets sputtering apparatus. The mixture gas of Ar and N2 with the ratio of N2 in pressure to total gas RN2 of 10% was optimal as the reactive working gas for depositing Mn4N films, since the deposition at excessive RN2 tended to cause the formation of Mn3N2 crystallites. In fact, they appeared in films deposited at RN2 higher than 30%. The film deposited at the substrate temperature Ts of 200 °C exhibited saturation magnetization 4πMs of about 300 G. The films prepared at Ts of 350 °C exhibited 4πMs and an in-plane coercivity Hc(parallel) of 450 G and 300 Oe, respectively. The films annealed at 400 °C in vacuum furnace exhibited 4πMs larger than about 510 G. However, the film annealed at temperature above 500 °C exhibited 4πMs smaller than 80 G.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-1335
    Keywords: Cepharanthine ; Inhibition of tumor promotion ; 12-O-Tetradecanoylphorbol 13-acetate ; Mezerein ; Delayed-type hypersensitivity ; Ornithine decarboxylase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Cepharanthine, isolated fromStephania cepharantha, is one of the bisbenzylisoquinoline-type alka-loids. We have found that it inhibits tumor promotion after topical application in two-stage carcinogenesis in mouse skin. Epidermal ornithine decarboxylase activities inhibited by topical application of cepharanthine, with an 5 Μg/mouse) and mezerein (5 Μg/mouse) were found to be inhibited by topical application of cepharanthine, with a ED50 of 1.2 Μmol and 1.4 Μmol respectively. These inhibitory effects of cepharanthine are considered to be related to its antitumor activity in two-stage carcinogenesis in mouse skin. Cell-mediated immunosuppression by TPA was unaffected by topical application of cepharanthine. A diet containing 0.005% cepharanthine (about 0.5 mg mouse− day−) slightly suppressed the two-stage promotion of skin tumors by twice-weekly applications of 2.5 Μg TPA for 2 weeks (first stage) followed by twice-weekly applications of 2.5 Μg mezerein for 23 weeks (second stage) in ICR mice following initiation by 50 Μg 7,12-dimethylbenz[a]anthracene. Oral administration of cepharanthine inhibits the tumor promotion in two-stage carcinogenesis in mouse skin.
    Type of Medium: Electronic Resource
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