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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new method of processing Tl-Ba-Ca-Cu-O (TBCCO) superconducting thin films. In this method, two identical elemental multilayer films containing Tl layers were prepared using an electron-beam deposition technique. The thin-film samples were then placed in face-to-face contact in a quartz crucible and heat treated at 740 °C for 10 min in flowing air. The x-ray microanalysis of the bottom sample indicates promising results for obtaining the desired chemical composition. Random characterization from different sections of the sample showed that the microanalysis values had less scatter than those for samples prepared using the usual bulk postdeposition method. The average chemical composition of the 13 points obtained from the random section is Tl1.8Ba1.8Ca1.9Cu2.0Ox. However, oxygen analysis showed that the concentration of oxygen is low and poorly distributed, presumeably attributable to the low oxygen flow. This method has several advantages over the conventional Tl-O vapor processing using pure metallic thallium, thallium oxide or bulk TBCCO. These advantages include: (a) increase in uniformity of thallium deposition, (b) safer processing as a result of a smaller release of thallium, and (c) reduction of processing cost.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9605
    Keywords: Tl-Ba-Ca Cu-O superconductors ; HTSC/ferroelectric tunable microwave devices ; HTSC/ferroelectric multilayer structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We describe materials deposition and characterization for a broad class of tunable microwave devices using high-temperature oxide superconductor and voltage-tunable oxide ferroelectric thin-film multilayer structures. Tl-Ba-Ca-Cu-O thin films deposited by sputtering ore-beam evaporation were patterned into microwave resonators, each consisting of two colinear microstrip line sections separated by a 5–20μm gap. A Ba0.1Sr0.9TiO3 (BST) layer was then over-coated to fill the gap. The relative dielectric constant of the BST films deposited by physical vapor or chemical techniques was measured at 77 K in the 1–10 MHz range and found to vary by up to a factor of 2 or more with voltage bias in test capacitor structures using Pt electrodes. In the BST (variable capacitor)-HTSC microwave resonator structures, the change of the relative dielectric constant of the BST under voltage bias has allowed variation of the fundamental frequency of up to 80 MHz in the 5–10 GHz range at 4 K. Film deposition by various techniques and associated structural, morphological, and electronic properties, as well as materials compatibility issues, are discussed.
    Type of Medium: Electronic Resource
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