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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Site-competition epitaxy for superior silicon carbide electronics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1659-1661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site-competition epitaxy is presented for the chemical vapor deposition of 6H-SiC epilayers on commercially available (0001)SiC silicon-face substrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112947
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The D-center in 6H-SiC is a boron-related deep hole trap observed previously in LPE-grown 6H-SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D-center signature is observed in high-purity n- and p-type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10−14 cm2 and 3×10−14 cm2 was determined for this level. Even though the D-center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n-type layer than in the p-type layer, which is explained by a recently proposed site competition model for impurity doping during 6H-SiC CVD growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111457
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1386-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H-SiC p+n junction diodes were fabricated in 6H-SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H-SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111915
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    Paper (German National Licenses)
    Fulltext
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