Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 3120-3122
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hall effect measurements in a Hall-bar configuration are performed on nitrogen-doped n-type bulk 4H, 6H, and 15R SiC single crystals cut into small parallelepipeds with their longest edges either parallel or perpendicular to the cˆ axis. In the temperature range investigated (40–700 K), an anisotropy of the electron Hall mobility is observed in all three polytypes. While the mobility perpendicular to the cˆ axis—with magnetic field perpendicular or parallel to the cˆ axis—is greater than the mobility parallel to the cˆ axis for 6H and 15R SiC, 4H SiC shows the opposite behavior. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112455
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