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  • 1
    Electronic Resource
    Electronic Resource
    Correlations between film properties and microwave surface resistance for YBa2Cu3O7−δ thin films on MgO (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3748-3752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ thin films grown by laser ablation on MgO (100) substrates were investigated for microwave applications. By systematically varying the growth conditions, we obtained films with various microstructures, low-frequency superconducting properties, and microwave performance. The surface resistances were determined from a measured unloaded quality factor in a 8.6-GHz microstrip resonator. Surface resistance was found to correlate most directly with the degree of grain alignment as revealed by electron channeling and x-ray diffraction studies. Films grown at optimal conditions gave a scaled surface resistance of 0.6 mΩ at 77 K and 10 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349227
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  • 2
    Electronic Resource
    Electronic Resource
    C-V and I-V characteristics of quantum well varactors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2340-2346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352322
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  • 3
    Electronic Resource
    Electronic Resource
    Surface resistance studies of laser-deposited superconducting Tl2Ba2CaCu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 496-498 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the surface resistance Rs of laser-deposited Tl2Ba2CaCu2O8 thin films on LaAlO3 substrates. After correcting for leakage of radiation through the films, we find that the normalized surface resistance Rs/RN (with RN the normal-state surface resistance at T ≥ Tc) is comparable to YBa2Cu3O7 (123) films. The higher transition temperature of the Tl films leads to superior microwave performance in particular at temperatures around T=77 K and above.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350257
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of substrate temperature on the orientation of YBa2Cu3O7 films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characteristics of YBa2Cu3O7 (YBCO) thin films were investigated by x-ray diffractometry. Films with good preferred orientation (001) and high Tc0 (86–90 K) can be prepared in situ using the dc magnetron sputtering method. For the films prepared on the ZrO2 (stabilized with Y2O3) substrate at a substrate temperature (Ts) less than 700 °C, there are different orientations and the degree of random orientation will decrease with increasing Ts. YBCO films with (001) can be obtained on ZrO2 with different crystal planes, such as (100), (110), and (111) at suitable temperature (760–850 °C). From the results it could be concluded that the YBCO film growth with c-axis orientation mainly depends on the substrate temperature Ts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104261
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrathin oxide-nitride-oxide films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1248-1250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the thickness limit of a thin nitride film which can withstand reoxidation is reduced to about 3.5 nm when it is deposited in situ on a thin-deposited oxide film. The deposited oxide apparently provides a better surface for nitride nucleation and initial growth. Using this finding an oxide-nitride-oxide (ONO) film as thin as 4.6 nm was fabricated and shown to have good electrical properties and low defect density. The current leakage through the film was close to the acceptable limit in dynamic-random-access-memory technology. It was also found that electron trapping is substantially higher in ONO films produced by reoxidation than in films having a top deposited oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103499
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  • 6
    Electronic Resource
    Electronic Resource
    Improved process for high-Tc superconducting step-edge junctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1561-1563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a process for the fabrication of YBaCuO high-Tc junctions based on the step-edge weak-link concept. The process emphasizes the creation of sharp and straight step edges on a substrate, and the restoration of oxygen content for superconducting materials at the step edges. A diamond-like carbon film is used as an ion milling mask for the creation of steps on substrates such as LaAlO3 and SrTiO3. Room-temperature plasma oxidation is shown to be effective in restoring Tc from processing related degradation for grains residing at the step edge. Using this process, dc SQUIDs were fabricated with 77 K electrical performances matching, and in certain cases exceeding, similar SQUIDs made using bicrystal-based tilt-boundary weak-link junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110749
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of electromigration of hydrogen in polycrystalline silicon using poly emitter bipolar transistors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2950-2952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration of hydrogen inside polycrystalline silicon (polysilicon) has been observed for the first time. Experiments were conducted on polysilicon emitter (poly emitter) n-p-n transistors with and without atomic hydrogen inside polysilicon. The current gain (β) of n-p-n was selected to monitor electromigration of hydrogen during current stress because of its high sensitivity to hydrogen passivation of dangling bonds. The major characteristics of hydrogen electromigration are shown in this letter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109180
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  • 8
    Electronic Resource
    Electronic Resource
    On-axis dc magnetron sputtering of large area high quality YBa2Cu3O7 superconducting thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated by our experiment that using the in situ dc magnetron sputtering method, it is possible to prepare high quality YBa2Cu3O7 (YBCO) thin films with substrates facing the region of plasma ring. The effect of oxygen resputtering can be greatly reduced with a high argon-oxygen working gas ratio and a large target to substrate distance. It is shown that high quality YBCO thin films of more than 60 mm in diameter, that is about the same size of the diameter of the YBCO target, can be prepared with this process. The thin films were characterized by x-ray diffractometry, and the critical temperatures were determined by both resistive and ac susceptibility techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107933
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of radio frequency radiation on the dc SQUID (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 100-102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radio frequency radiation on the dc SQUID are examined. Simulations show how the shape of the SQUID transfer characteristic is distorted by radio frequency interference (RFI). How this affects three commonly used SQUID modulation methods is discussed, and the results explain why we experimentally observe the bias current reversing readout method to be the least susceptible to RFI. The commonly seen increase in the low frequency flux noise power spectrum of dc SQUIDs in unshielded environments is also explained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113046
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  • 10
    Electronic Resource
    Electronic Resource
    High-Tc, multilevel edge junction superconducting quantum interference devices with SrTiO3 barriers operating at 77 K (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 247-249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All high-Tc, multilevel edge junction superconducting quantum interference devices (SQUIDs) which now operate at 77 K have been fabricated using laser-ablated YBaCuO electrodes and in situ laser-ablated SrTiO3 for the barrier material. Devices with a SQUID inductance of about 70 pH have a peak to peak voltage swing, VΦ, up to 8 μV (dV/dΦ(approximately-equal-to)25 μV) and a flux noise (SΦ) of about 3×10−10 Φ20/Hz in the white noise region. IcRn, products for these devices are about 35 μV at 77 K with Ic in the range of 3–100 μA and operation to temperatures as high as 84 K observed. Scaling of the junction conductance and critical current with junction size has been measured on many devices and we observe an IcRn product that varies approximately as J0.89c.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111518
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