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  • 1990-1994  (5)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3847-3854 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 μA/cm2 and a nominal ion dose varied from 3×1017 to 3×1018 Fe/cm2. At a fixed nominal dose of 4×1017 Fe/cm2, a semiconducting β-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified β-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 μA/cm2. While implanting at a fixed ion current density of 152 μA/cm2 with varying ion dose, the β-FeSi2 phase began to form first at a nominal dose of 3×1017 Fe/cm2, and eventually transformed into a metallic α-FeSi2 phase when the nominal dose reached 3×1018 Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. The formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1929-1932 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fe/Au multilayers were prepared by alternative vapor deposition. The periodicity, thickness, chemical composition, microstructure, and the magnetic moment of the films were determined and measured by various methods. The magnetic moment per Fe atom in Fe/Au multilayers was considerably enhanced when the Fe layer thickness was thinner than 8 nm and it was up to 2.59 μB, i.e., about 1.2 times of that of bulk Fe, at an Fe layer thickness of 4.5 nm. The experimental results also revealed that as the thickness of the Fe layer decreased, there was an increasing tendency towards perpendicular magnetization in the Fe/Au multilayers. The possible mechanism responsible for the modification of magnetic properties is also discussed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1702-1710 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The amorphization of Ni-Nb multilayered alloy films by xenon ion irradiation at room temperature and by high-temperature solid-state reaction was studied. The composition range favoring amorphization was carefully determined to be 20–85 at. % Ni by energy-dispersive spectroscopy attached to the transmission electron microscope. A new metastable crystalline phase (MX) of hexagonal structure was formed in Ni75Nb25 and Ni70Nb30 multilayered films. Interestingly, in the Ni75Nb25 multilayered films, with increasing mixing dose an amorphous phase was first formed and then the MX-phase was observed, while in the Ni70Nb30 multilayered films the MX phase was formed at relatively low doses and turned amorphous upon further mixing or 400 °C annealing for 2 h. Besides, annealing of the as-deposited Ni70Nb30 multilayered films at 300 °C for half an hour also resulted in the formation of the MX phase. The thermal stability of the ion-mixed amorphous alloys was also studied by subsequent annealing. To give semiquantitative interpretation to all the above observations, the Gibbs free-energy diagram of the system, in which especially the free-energy curve of the MX phase is added, was constructed on the basis of the model of Nissen et al. [CALPHAD 7, 51 (1981)] and the method proposed by Alonso and Simozar [Solid State Commun. 46, 765 (1983)]. The explanation based on this diagram is in good agreement with our experimental results.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2356-2358 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report, in this letter, the formation of TiSi2 by direct Ti-ion implantation into silicon wafers using a metal vapor vacuum arc ion source. Implantation was conducted by 80 KeV Ti ions to a dose of 5×1017/cm2 with various ion current densities. When the ion current density exceeded 100 μA/cm2, the equilibrium TiSi2 of the C54 structure was uniquely formed. Additional evidence of the formation of C54-TiSi2 was given by the resistivity measurements, i.e., the sheet resistivity was below 3.0 Ω/(D'Alembertian). The formation mechanism is also discussed in terms of the beam heating effect during implantation.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 944-946 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Al80Yb20 multilayered alloy films were amorphized by ion beam mixing at room temperature. A new metastable phase of hexagonal structure was formed when the irradiation dose was greater than that required to amorphize the alloy films. The metastable phase turned amorphous when the film was annealed at 500 °C for 10 min. It was also found that Al-Yb multilayers could be amorphized by solid state reaction. Al1−xYbx multilayered alloy films, with 17〈x〈30 at. %, became amorphous through interdiffusion at 450 °C for 20 min.
    Materialart: Digitale Medien
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