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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4313-4318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1702-1710 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphization of Ni-Nb multilayered alloy films by xenon ion irradiation at room temperature and by high-temperature solid-state reaction was studied. The composition range favoring amorphization was carefully determined to be 20–85 at. % Ni by energy-dispersive spectroscopy attached to the transmission electron microscope. A new metastable crystalline phase (MX) of hexagonal structure was formed in Ni75Nb25 and Ni70Nb30 multilayered films. Interestingly, in the Ni75Nb25 multilayered films, with increasing mixing dose an amorphous phase was first formed and then the MX-phase was observed, while in the Ni70Nb30 multilayered films the MX phase was formed at relatively low doses and turned amorphous upon further mixing or 400 °C annealing for 2 h. Besides, annealing of the as-deposited Ni70Nb30 multilayered films at 300 °C for half an hour also resulted in the formation of the MX phase. The thermal stability of the ion-mixed amorphous alloys was also studied by subsequent annealing. To give semiquantitative interpretation to all the above observations, the Gibbs free-energy diagram of the system, in which especially the free-energy curve of the MX phase is added, was constructed on the basis of the model of Nissen et al. [CALPHAD 7, 51 (1981)] and the method proposed by Alonso and Simozar [Solid State Commun. 46, 765 (1983)]. The explanation based on this diagram is in good agreement with our experimental results.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7217-7221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion-induced solid-state amorphization reaction (SSAR) in polycrystalline Ni/amorphous Si multilayers has been studied using an in situ x-ray diffraction technique together with transmission electron microscope observations. The amorphization reaction was found to occur both on the Ni/Si interfaces in terms of a planar-layer growth model and along the grain boundaries in the Ni sublayers. Thermodynamic and kinetic interpretations for the SSAR at grain boundaries are presented and an amorphous growth model is also suggested for elucidating the SSAR in polycrystalline Ni/amorphous Si multilayers.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2471-2474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Little is known about the interdiffusion in the amorphous Ni–Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni–Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as De(T)=2.13 ×10−17 exp[−(0.61±0.02)/kBT] m2/s (423–613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 15 (1996), S. 1189-1191 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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