Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 4313-4318
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352814
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