ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
AlGaAs graded-index separate-confinement heterostructure lasers with lateral mode confinement are realized by one time metalorganic chemical vapor deposition with silicon dioxide stripes as selective masks and current blocking layers. The effect of the active region width on lasing characteristics is investigated. The threshold current and external quantum efficiency are around 12 mA and 70%, respectively, for narrow lasers. Elevated waveguide structure formed by the growth-rate difference between (100) and sidewall planes was effective for stable lateral mode characteristics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109621
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