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  • 1
    ISSN: 1432-1041
    Keywords: Nicorandil ; Ischaemic heart disease ; Tl-201 myocardial tomography ; angina pectoris ; myocardial perfusion ; coronary artery angioplasty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The effect of nicorandil on myocardial perfusion in ischaemic heart disease has been studied using exercise-load Tl-201 myocardial SPECT (Ex-SPECT). Ex-SPECT was carried out in 12 patients with previous myocardial infarction (OMI) and 9 with angina pectoris (AP) before and after administration of nicorandil 15 mg/day, for three or more weeks; % Tl uptake and the washout rate in infarcted or ischaemic areas were calculated from short axial images using the Bull's eye method. In the OMI group, % Tl uptake and washout rates in the infarction areas improved significantly from 52.4% and 0.25 before nicorandil to 60.4% and 0.38 after it. In the AP group, too, % Tl uptake and washout rates showed a significant improvement from 56.9% and 0.10 before to 69.1% and 0.33 after administration. Six subjects who had not received the drug, and who showed negative washout rates, had high improvement rates when nicorandil was administered, suggesting that the drug could increase myocardial perfusion during exercise loading as well as suppressing coronary spasm. Ex-SPECT was done in 4 subjects before and after nicorandil and after subsequent surgical treatment (PTCA or CABG) and the effects of the two therapies were compared. The washout rate was improved from 0.01 to 0.34 by administration of nicorandil, and a notable increase in coronary artery blood flow was achieved compared to the level after surgical treatment, i.e. 0.50. It was concluded that, normal dosages of nicorandil have a powerful direct effect of dilating the coronary arteries without any influence on preload or afterload.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multilayers of Pt/C, W/Si, and W/B4C have been developed as a reflector and dispersive element to be applied to the beamline optical system of the synchrotron radiation (SR) in 1- to 20-A region. Pt/C(2d=105 A, N=10) overcoated with Pt(d=100 A) is useful in a glazing incidence optics, which makes it possible to extend the wavelength region to the shorter side at the fixed incidence angle. W/Si(2d=53 A, N=200) and W/B4C(2d=31 A, N=300) are utilized as a dispersive element of double-crystal monochromator (DXM). The second order of Bragg reflection of W/Si is matched to the first order of KAP(2d=26.6 A) crystal. The characterization of these multilayers was carried out by using characteristic x rays and monochromatized SR in 1.5–8 keV. DXM was made of a combination of W/Si and KAP and a pair of W/B4C. Multilayers are used as the first crystal to protect the damage of the crystal caused by the strong irradiation of SR. A pair of W/B4C is aimed at getting high throughput. The energy resolution of these combinations was evaluated with Na–K absorption edge of NaCl around 1.07 keV, which was a bit poor compared to a pair of beryl crystals.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 821-823 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An In surface segregation effect during the growth of InGaAs on GaAs by molecular-beam epitaxy has been studied by reflection high-energy electron diffraction measurements supported by a segregation model. Indium atoms segregate at a ratio of more than 0.8 under the conventional growth conditions for InGaAs, which causes the formation of accumulated In atoms on the surface. The transition from two-dimensional to three-dimensional growth occurs when the amount of In reaches around 1.7 monolayer with a nominal alloy composition greater than 0.25. This transition determines the upper limit on the In composition of the InGaAs layer for application as an electron channel in modulation-doped field-effect transistors.
    Type of Medium: Electronic Resource
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