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  • 1990-1994  (18)
  • 1
    Electronic Resource
    Electronic Resource
    Output characteristics of a discharge-pumped F2 laser (157 nm) with an injection-seeded unstable resonator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2241-2246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To improve beam quality, an injection-seeded unstable resonator was applied to a discharge-pumped F2 laser, which is normally dominated by amplified spontaneous emission with a large beam divergence when using a normal stable cavity, due to the laser's extremely high gain (a small-signal gain-length product ∼29). The time-dependent injection-seeding efficiency was obtained for various injection timings by measuring a ratio of the output laser intensity with the same polarization as the seed laser. Correlation of the injection-seeding efficiency with the temporal evolution of the laser-beam divergence was also studied. Both the time-dependent beam divergence and the injection-seeding efficiency showed degradation at a later part of the laser pulse.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354706
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The I-V characteristics of double-barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3131-3136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a calculation on the current-voltage characteristics of double-barrier resonant tunneling diodes. The results can well-explain experimental observations, in particular, the temperature dependence of both the absolute current amplitude and the resonant voltage positions. Our calculation takes into account the self-consistent Poisson equation, quantum mechanical tunneling, and band-gap offset at the heterojunctions. In addition, the calculation includes a realistic scattering-induced broadening effect, with which a quantitative fit throughout the entire negative differential resistance (NDR) region is demonstrated. Finally, we show that the differential resistance in the NDR region can be tuned, when asymmetrical tunneling barriers are used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349292
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of a new field-effect resonant tunneling transistor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1537-1539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present quantum mechanical self-consistent calculations on the transfer characteristics of a new resonant tunneling transistor. The model structure consists of a source, a tunneling barrier, a quantum-well drain, a thick insulator, and a backgate. The tunneling barrier consists of a double-barrier structure. We demonstrate that based on energy and momentum conservations, the transistors display oscillatory negative transconductance, as the gate can control the resonant tunneling probability between source and drain. With the inclusion of a realistic energy relaxation time of ∼0.1 ps, the double-barrier resonant tunneling transistor shows an enhancement of the tunneling current density and the negative transconductance feature is only slightly changed. We also find that the quantum-well drain is not able to completely screen the electric field imposed by the backgate bias as a result of limited density of states of two-dimensional systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351226
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    On the intrinsic bistability in resonant tunneling structures: Observation of area dependence of hysteresis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4132-4134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the current-voltage characteristics of double-barrier resonant tunneling diodes with areas ranged from ∼400 μm2 to ∼10 μm2 at a temperature of 300 and 4.2 K. For diodes of large areas, the characteristic negative differential resistance is always accompanied by a hysteresis and oscillation at several tens of MHz. However, for smaller diodes, the hysteresis and oscillation disappear, and the tunneling current shows a smooth transition between peak and valley. Our observation shows that the hysteresis can result from a load line effect. Were the hysteresis an intrinsic behavior, it should persist as the device area is reduced. We therefore conclude that the intrinsic bistability is yet to be experimentally confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348428
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum mechanical correction on capacitance-voltage characteristics of narrow gap semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2208-2210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that for narrow band-gap semiconductors, the doping concentration deduced from capacitance-voltage measurements can be substantially underestimated due to surface quantization effect. While our derivation can be applied to all materials, detailed accounts on p-type Hg0.788Cd0.212Te are given as an example. We found that for a practical doping range, 1×1015 cm−3 to 1×1017 cm−3, the doping level can be underestimated by 53% to 173%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349460
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    On the intrinsic bistability in resonant tunneling structures: Observation of area and temperature dependence of hysteresis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2473-2475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental observation on the area and temperature dependence of the hysteresis in the current-voltage characteristics of double-barrier resonant tunneling diodes. Our observation shows that the hysteresis can simply result from a load line effect, since (1) the hysteresis will disappear when the the device area is reduced, and (2) the hysteresis becomes wider at lower temperatures. We compare the data with theoretical predictions from the intrinsic bistability picture, and obtain the criterion for observing current bistability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349404
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Dependence of InAs phonon energy on misfit-induced strain (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110137
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Acoustic waves in a piezoelectric plate loaded by a dielectric fluid (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1328-1330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements and calculations of reflection spectra of an X-cut LiNbO3 plate immersed in a dielectric fluid have been performed, with the numerical results presented in an innovative image data format. The influence of dielectric fluid loading on all branches of the reflection coefficient function has been investigated. Strong piezoelectric coupling leads to unexpected plate wave dispersion in the fundamental symmetric mode, where the group velocity exceeds the phase velocity at low frequency. The experimental data are in excellent agreement with the results of an exact partial wave analysis. These phenomena and their effect on plate wave behavior can play an important role in the performance of chemical or physical liquid sensing devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109720
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of negative persistent photoconductivity in an n-channel GaAs/AlxGa1−xAs single heterojunction (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2113-2115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel modulation doped GaAs/Al0.33Ga0.67As single heterostructure, where two-dimensional electrons have a mobility of ∼550 000 cm2/V s when density is ∼3.0×1011 cm−2. Based on extensive magnetotransport measurements, we conclude that the negative persistent photoconductivity effect comes from the time dependence of (1) the annihilation of two-dimensional electrons by photoexcited holes, and (2) the trapping and de-trapping of photoexcited electrons by shallow donors in doped Al0.33Ga0.67As. A model that quantitatively explains the nonexponential recovery time is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107106
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