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  • 1990-1994  (3)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1211-1212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new real refractive index guided GaAlAs laser which satisfies both low operating current and low noise characteristics by self-sustained pulsation. The structure has a planar active layer and a GaAlAs optical confinement layer which give large saturable absorber, and small internal loss. As a result, as operating current as low as 19.7 mA at an output power of 3 mW is obtained under self-sustained pulsation, leading to a relative intensity noise level less than −135 dB/Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112073
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical conductivity of α-H x V2O5 (X=0.00-0.27): Dependence of hydrogen concentration and orientation (1994)
    Springer
    Journal of materials science 29 (1994), S. 478-481 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The dependence of the electrical conductivity, σ, on the hydrogen concentration and crystallographic orientation has been investigated using single crystals of HxV2O5, which were grown by the Bridgeman method and doped with hydrogen within the solid solubility in the α phase by the spillover technique. The temperature dependence of σ showed the feature of diffusive hopping of thermally activated electrons above ∼180 K and variable range hopping below ∼180 K. The dependence of σ on the crystallographic orientation was little different from that of V2O5. The change in σ with the hydrogen concentration was not monotonic; σ increases withx up tox }-0.06, but decreases abovex }-0.06. This behaviour can be explained based on the competition between the increase in the carrier density and the depression of the mobility of carriers with increasingx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01162510
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Crystal structure and hydrogen occupation in H x V2O5(x=0.0–3.9) (1994)
    Springer
    Journal of materials science 29 (1994), S. 1319-1323 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Changes in the crystal structure and the lattice constants of powdered crystalline V2O5 after absorption of hydrogen were measured, as a function of the concentration, by X-ray diffractometry. The diffraction spectra obtained showed that three kinds of phases, α (x〈0.4 in H x V2O5), Β (co-existing with either terminal phase in the range of 0.4⩽x〈3.2) and γ (3.2⩽x⩽3.9), appear up tox=3.9, which was found to be the upper limit of the absorption at 70
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00975082
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    Paper (German National Licenses)
    Fulltext
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