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  • 1
    Electronic Resource
    Electronic Resource
    The association of the insulin resistance syndrome with impaired glucose tolerance and NIDDM in the Japanese general population: the Hisayama study (1994)
    Springer
    Diabetologia 37 (1994), S. 897-904 
    Details
    ISSN: 1432-0428
    Keywords: Key words Insulin resistance ; non-insulin-dependent diabetes mellitus ; impaired glucose tolerance ; population-based study ; epidemiology ; Japanese ; Hisayama study.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To elucidate the risk factors for initiating glucose intolerance, the relevant factors were explored in a cross-sectional survey conducted in a sample population aged 40–79 years old selected from a Japanese community, Hisayama, Japan in 1988. A 75-g oral glucose tolerance test was used to classify 1,073 men (72.5 % of the entire population in the same age range) and 1,407 women (80.5 %) into normal, impaired glucose tolerance and diabetes mellitus groups. In all age and sex groups with normal glucose tolerance, the sum of fasting and 2-h post-load insulin values varied widely and demonstrated significant positive correlations with triglycerides, body mass index, waist-hip ratio, systolic and diastolic blood pressure, while it negatively correlated to HDL cholesterol (p 〈 0.05). Insulin resistance was presumed to develop in normal glucose tolerance subjects with hyperinsulinaemia. The sum of the insulin concentrations, triglycerides, body mass index, waist-hip ratio and blood pressure levels was significantly associated with impaired glucose tolerance in all age and sex groups after adjustment for age (p 〈 0.05) and was also related to diabetes in either all or some age and sex groups, respectively (p 〈 0.05). It was shown that glucose intolerance in the general population was associated with the factors related to insulin resistance. These cross-sectional data, therefore, support the hypothesis that insulin resistance is the primary defect in the development of glucose intolerance in the Japanese general population. However, a further prospective study is still needed in order to confirm this hypothesis. [Diabetologia (1994) 37: 897–904]
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00400945
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  • 2
    Electronic Resource
    Electronic Resource
    Prevalence of Type 2 (non-insulin-dependent) diabetes mellitus and impaired glucose tolerance in the Japanese general population: the Hisayama study (1993)
    Springer
    Diabetologia 36 (1993), S. 1198-1203 
    Details
    ISSN: 1432-0428
    Keywords: Prevalence of diabetes mellitus ; 75-g oral glucose tolerance test ; a Japanese community ; population-based epidemiologic study ; Hisayama
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We determined the population-based prevalence of diabetes mellitus in members of the Japanese community, Hisayama aged 40–79 years old by a 75-g oral glucose tolerance test. The basic population used to calculate diabetic prevalence was 1,077 men (72.8% of the whole population in the same age range) and 1,413 women (80.8%) including ten diabetic patients on insulin therapy. In addition, we compared the prevalence of history of diabetes which was acquired by interview or questionnaire, between participants and non-participants in the 75-g oral glucose tolerance test, but they were not statistically different. The age-adjusted prevalence of diabetes to world population was 12.7% for men and 8.4% for women, and that of impaired glucose tolerance was 19.6% for men and 18.4% for women. These figures were much higher than those previously reported from several Japanese communities. The results obtained from the present study could reveal true prevalence of diabetes among the Japanese population. In addition, the reasons for the increasing prevalence of diabetes among the recent Japanese population are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00401066
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  • 3
    Electronic Resource
    Electronic Resource
    The association of the insulin resistance syndrome with impaired glucose tolerance and NIDDM in the Japanese general population: the Hisayama study (1994)
    Springer
    Diabetologia 37 (1994), S. 897-904 
    Details
    ISSN: 1432-0428
    Keywords: Insulin resistance ; non-insulin-dependent diabetes mellitus ; impaired glucose tolerance ; population-based study ; epidemiology ; Japanese ; Hisayama study
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To elucidate the risk factors for initiating glucose intolerance, the relevant factors were explored in a cross-sectional survey conducted in a sample population aged 40–79 years old selected from a Japanese community, Hisayama, Japan in 1988. A 75-g oral glucose tolerance test was used to classify 1,073 men (72.5% of the entire population in the same age range) and 1,407 women (80.5%) into normal, impaired glucose tolerance and diabetes mellitus groups. In all age and sex groups with normal glucose tolerance, the sum of fasting and 2-h post-load insulin values varied widely and demonstrated significant positive correlations with triglycerides, body mass index, waist-hip ratio, systolic and diastolic blood pressure, while it negatively correlated to HDL cholesterol (p〈0.05). Insulin resistance was presumed to develop in normal glucose tolerance subjects with hyperinsulinaemia. The sum of the insulin concentrations, triglycerides, body mass index, waist-hip ratio and blood pressure levels was significantly associated with impaired glucose tolerance in all age and sex groups after adjustment for age (p〈0.05) and was also related to diabetes in either all or some age and sex groups, respectively (p〈0.05). It was shown that glucose intolerance in the general population was associated with the factors related to insulin resistance. These cross-sectional data, therefore, support the hypothesis that insulin resistance is the primary defect in the development of glucose intolerance in the Japanese general population. However, a further prospective study is still needed in order to confirm this hypothesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00400945
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of shielded microstrip line resonators made from double-sided Y1Ba2Cu3Ox films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4440-4442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-sided Y1Ba2Cu3Ox films are prepared on MgO(100) substrates for KrF excimer laser deposition and their electrical properties, both direct current and microwave frequencies, are examined. Double-sided Y1Ba2Cu3Ox films show zero resistivity at temperatures higher than 88 K and ρ(300K)/ρ(100 K) higher than 2.7. Using a niobium shield, a double-sided Y1Ba2Cu3Ox films microstrip line resonator at 5.7 GHz shows an unloaded Q value of 2.6×104 at 77 K and 1.1×105 at 4.2 K. These are the highest class of unloaded Q known to be reported for planar-type resonators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357342
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of microstructure of YBa2Cu3Ox films on power handling capability studied with microstrip resonators (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4256-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave properties of two types of YBa2Cu3 Ox (YBCO) films with different microstructure have been studied at 4.2 K and 6 GHz. One type of film was grown at a constant substrate temperature of 705 °C during the film growth (constant-growth films). The other type of film ws prepared with two-stage process: initial growth at a lower temperature of 630 °C and subsequent higher-temperature deposition at 705 °C (two-stage-growth films). Although both types of film have very similar intrinsic YBCO material properties such as c-axis lattice constant, Tc, and unloaded quality factor Qu at low power levels, quite different microwave properties are observed at high power levels. The two-stage-growth films with small grains less than 100 nm show fairly small power dependence of Qu and resonance frequency on input power up to +10 dBm. On the other hand, the constant-growth films with large grains (∼200 nm) show significant changes in these properties, accompanied by an appearance of asymmetric resonance curves. These results show that the power handling capability of granular YBCO films is mainly affected by the extrinsic film microstructure and that the quality of the grain boundaries causes the difference in power dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357309
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of Josephson junctions using heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1685-1687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson junctions from c-axis oriented heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films. The junctions showed resistively shunted junctionlike characteristics up to 30 K. Several junctions showed hysteresis at low temperatures. The highest value of the product of the critical current and the normal state resistance of the junctions was about 0.2 mV. Clear Shapiro steps at the expected voltages were observed in the presence of external microwave irradiation. The height of these steps oscillated to full suppression as a function of the microwave source power. Moreover the periodic magnetic field dependence of the critical current was clearly observed. These results indicated a good uniformity in the Josephson current distribution in these junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109576
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  • 7
    Electronic Resource
    Electronic Resource
    In-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2445-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on large in-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate. By tilting the surface normal axis about 4° toward [111]SrTiO3, regular steps and terraces were formed on the substrate surface and perfect alignment of film b axis with incommensurate modulation along [110]SrTiO3 was realized. The film c axis was perpendicular to the (001)SrTiO3 terrace, thus the film c axis grew tilted 4° toward [111] from surface normal due to the surface inclination. In those epitaxial configurations, the in-plane resistivity along the step direction(ρ[110]) involved the contribution from the c-axis(ρc) component, and we observed the large resistivity anisotropy between a- and b- direction of the film. The transport along a axis(ρa) showed a low resistivity with metallic temperature dependence while the resistivity along the step direction(ρ[110]) was higher and semiconductive. The ratio of ρc/ρa ≈ 104 estimated in this experiment agrees well with the anisotropy observed in the bulk single crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105990
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth study of Bi2(Sr,Ca)3Cu2Ox films on cleaved MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104381
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103302
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  • 10
    Electronic Resource
    Electronic Resource
    Dynamics of laser-ablated iron in nitrogen atmosphere (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3340-3342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast photography with a framing streak camera is applied to investigate the dynamics of ablated Fe particles by a pulsed excimer laser when a nitrogen atmosphere is present. Two stages of expansion are found in the generated plume. The first one starts just after the laser irradiation where the hemispherical and unidirectional plumes are found simultaneously. The dynamics of the unidirectional plume is described by a drag model for 300 ns. The second stage occurs at 300 ns, and the unidirectional plume expands again in agreement with a delayed blast wave model. The thickness distribution of the deposited Fe-N film is well correlated with the change in the plume geometry, then with the nitrogen pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111272
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