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  • 2000-2004  (2)
  • 1985-1989  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8589-8593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the subband energy levels in AlGaAs/GaAs multiple quantum wells grown at different temperatures (200–600 °C) by using the piezoreflectance and photoreflectance in room temperature. Under subsequent 30 s rapid-thermal annealing at different temperatures (600–1000 °C), we observed a large energy blueshift in samples with growth temperature below 400 °C. This blueshift energy may be attributed to the modification of quantum wells caused by gallium vacancy enhanced Al–Ga interdiffusion. The energy blueshifts were analyzed by solving Fick's second law for Al diffusion in quantum wells, obtaining an effective activation energy of 0.75 eV. We discuss our results using the nonequilibrium diffusion equation and comparing them with other experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3136-3141 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of uniaxial compression, high-temperature (920 °C) heat treatment, and heat treatment plus magnetic field on grain alignment in bulk ceramic pellets of HoBa2Cu3O7−δ and YBa2Cu3O7−δ were studied and separated. Uniaxially cold pressing prereacted powder into pellets at room temperature is found to yield significant grain alignment on the flat end surfaces of the pellets perpendicular to the pressing axis, where the c axes of the grains are parallel to this axis, in agreement with previous reports. A simple method to quantitatively determine the degree of surface grain alignment from the powder x-ray diffraction data from these surfaces is used. These data were augmented by x-ray rocking curve measurements. The degree of alignment of the cold pressed samples was found to increase with increasing pressure up to our pressure limit of 310 MPa. However, bulk magnetization anisotropy measurements on these pellets indicate that the degree of bulk alignment is only about 1/3 to 1/2 that inferred from the above surface measurements, which in turn suggests that the degree of alignment decreases with distance from the flat end surfaces. We find that a pronounced additional surface grain alignment is produced by heat treating the cold-pressed samples at high temperature (920 °C). We also observed a significant influence during the high-temperature annealing of a small (0.7 T) applied magnetic field on the alignment of the surface grains. A model to explain these observations is presented and discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2502-2504 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050 °C for 30 s. Metal–oxide–semiconductor (MOS) structures were fabricated and capacitance–voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29 eV (H1) and Ev+0.42 eV (H2), and the capture cross sections are 4.70×10−16 cm2 and 1.44×10−15 cm2, respectively. The presence of Si(Single Bond)H and Si(Single Bond)H2 bonds was confirmed by Fourier transform infrared spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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