Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2094-2096
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.101174
Permalink
Bibliothek |
Standort |
Signatur |
Band/Heft/Jahr |
Verfügbarkeit |