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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2435-2441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Powdered samples of the type Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb, are synthesized over the range 0≤x≤0.5 starting from nitrate solutions of the rare earths. X-ray diffraction and Raman scattering are used to analyze the samples. These compounds, at least in the low doping regime and for strictly trivalent dopants, form solid solutions that maintain the fluorite structure of CeO2 with a change in lattice constant that is approximately proportional to the dopant ionic radius. The single allowed Raman mode, which occurs at 465 cm−1 in pure CeO2, is observed to shift to lower frequency with increasing doping level for all the rare earths. However, after correcting for the Grüneisen shift from the lattice expansion, the frequency shift is actually positive for all the strictly trivalent ions. In addition, the Raman line broadens and becomes asymmetric with a low frequency tail, and a new broad feature appears in the spectrum at ∼570 cm−1. These changes in the Raman spectrum are attributed to O vacancies, which are introduced into the lattice whenever a trivalent RE is substituted for Ce4+. This conclusion is supported by a simple model calculation of the effects of O vacancies on the Raman spectrum. The model uses a Green's function technique with the vacancies treated as point defects with zero mass.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4046-4054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work fast-changing bias conditions in the nanosecond regime are applied to n-channel metal-oxide-semiconductor field effect transistors. Short bunches of holes are injected into the silicon dioxide (SiO2) and subjected to different field conditions which influence the final trapping. It is shown that by this experiment the kinetics of hole movement in the oxide can be studied. The model of polaron formation originating from work on high-energy irradiation is essentially confirmed. Evidence for a prepolaron formation phase is found, however, with a smaller scattering length for which we propose the different hole formation process in this experiment to be responsible. On this basis the interface trap formation by injected holes is investigated. It is found that not the number of trapped holes but the one of injected holes is decisive for interface trap formation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7595-7601 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homogeneous injection of holes into the gate oxide of metal-oxide-semiconductor (MOS) devices was obtained using p-channel MOS transistors under illumination conditions. Because gate hole currents could be measured the dependence of the hole trapping on the oxide electric field and on the energy of the holes at the injection point could be investigated. In contrast to results recently reported for electron injection no evidence for the generation of traps during hole injection was found. Only a small dependence of the capture cross section on the oxide field was observed. The study of the interface state generation during hole injection at various fields revealed that the amount of interface states directly generated by the injected holes is less than 5% of the number of trapped holes. For longer times a transformation process occurs and a correlation is found between the detrapping of holes and the generation of interface states.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 811-815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-A(ring)-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2977-2982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple laser reflective interferometer has been employed for in situ monitoring of diamond film growth in a hot-filament chemical vapor deposition reactor. This method uses a low power HeNe laser beam reflected at normal incident from the substrate. The high refractive index of the diamond film and the relatively high reflectivity of the Si substrate result in pronounced and easily detected interference oscillations in the reflected beam intensity. The oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variations of the extrema of the oscillations provide an estimate of the quality and surface texture of the diamond films. Significant improvement in research productivity has been realized by using this technique.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1660-1660 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4515-4522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Palladium oxide thin films are studied by ellipsometry, optical transmission, and Raman scattering. The PdO films are made by completely oxidizing Pd films sputtered onto fused silica substrates, and their optical constants determined using a combination of ellipsometry and transmission measurements. Oxidation kinetics experiments are performed on thick Pd substrates at temperatures of 300–500 °C. The optical properties of the films show a thickness dependence suggesting an increased absorption at the PdO-Pd interface. Ellipsometry on oriented single crystals of PdO yields the anisotropic optical constants at 632.8 nm. These results are combined with an effective medium theory to show that the oxidized films have a void density of 20–25%. Raman scattering is demonstrated to be a very sensitive probe for detecting the presence of PdO on Pd. An oxide only a few A(ring) thick is readily detectable, despite the absence of any surface enhanced Raman effect.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1596-1604 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film oxides of platinum have been prepared by reactive sputtering and characterized primarily by x-ray diffraction (XRD) and Raman scattering. Different phases of the Pt-O system were obtained by adjusting sputtering parameters such as gas composition, deposition rate, and substrate temperature. Optimum conditions for producing crystalline α-PtO2 and PtO were identified. Raman spectra of α-PtO2 films show two sharp lines at 514 and 560 cm−1, in agreement with those from commercially available powders. XRD and high-resolution scanning electron microscopy (HRSEM) analyses indicate that these samples have a poorly crystallized structure with lack of order along the c axis. The Raman spectra from PtO show two broad peaks at 438 and 657 cm−1, close to the lines seen in PdO, which has the same structure as PtO. Estimates from XRD line broadening and HRSEM photographs indicate mean crystallite sizes on the order of 300 A(ring). Infrared reflectivity spectra yield two of the three ir-active phonons, and along with scanning tunneling microscopy measurements suggest that PtO is a semiconductor. Thermoelectric measurements show that the predominant carriers are p-type, and ir reflectivity data indicate a carrier concentration of ∼4×1018 cm−3.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 168-169 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-trap states in the gate oxide of a Si metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated by inhomogeneous excimer laser irradiation. Subbandgap ultraviolet light photons with an energy exceeding a threshold lying between 5.5 and 6.4 eV were found to excite electrons from these originally neutral states into the SiO2 conduction band. A fixed positive charge is left behind. The degradation in MOSFET performance due to the irradiation is comparable to that accompanying hot-hole injection. Also, subsequent hot-electron stress changes the device characteristics in a way similar to hot-electron stress following hot-hole stress. It is concluded that the traps responsible for hot-carrier degradation cause the optically induced charge trapping.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 26 (1954), S. 498-502 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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