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  • 1
    Electronic Resource
    Electronic Resource
    Reduced noradrenaline turnover in streptozotocin-induced diabetic rats (1985)
    Springer
    Diabetologia 28 (1985), S. 692-696 
    Details
    ISSN: 1432-0428
    Keywords: Sympathetic nervous system activity ; noradrenaline turnover ; streptozotocin rat ; brown adipose tissue ; heart ; pancreas ; insulin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary To clarify whether activity of the sympathetic nervous system is decreased in streptozotocin-induced diabetic rats, noradrenaline turnover, which is a reliable indicator of sympathetic nervous system activity, was measured in the interscapular brown adipose tissue, heart and pancreas of streptozotocin diabetic rats. Results from studies using inhibition of noradrenaline biosynthesis with α-methyl-p-tyrosine demonstrated significant reductions (p〈0.05-0.001) in sympathetic nervous system activity in the interscapular brown adipose tissue, heart and pancreas of streptozotocin (65 mg/kg) diabetic rats, compared with measurements in streptozotocin (35 mg/kg) diabetic and saline-control rats. The daily injections of neutral protamine Hagedorn insulin to streptoz/otocin (65 mg/kg) diabetic rats prevented the decrease of noradrenaline turnover in the interscapular brown adipose tissue and heart significantly (p〈0.02), but this was less marked in pancreas, compared with non-treated streptozotocin (65 mg/kg) diabetic rats. Furthermore reduced noradrenaline turnover was also observed in the control rats which showed comparable changes in body weight to the rats injected with streptozotocin (65 mg/kg). These results suggest that poorly controlled streptozotocin diabetic rats may have reduced sympathetic nervous function, and that insulin therapy might prevent this.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00291978
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  • 2
    Electronic Resource
    Electronic Resource
    An autopsy case of acute porphyria with a decrease of both uroporphyrinogen I synthetase and ferrochelatase activities (1984)
    Springer
    Acta neuropathologica 64 (1984), S. 6-11 
    Details
    ISSN: 1432-0533
    Keywords: Acute porphyria ; Porphyric neuropathy ; Axonal degeneration ; Uroporhyrinogen I synthetase ; Ferrochelatase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary An autopsy case of a 37-year-old woman with acute porphyria is reported. The patient began to complain of severe menstrual pains, and later developed serious peripheral neuropathy and various autonomic nervous symptoms. The autopsy revealed a marked loss and degeneration of axons and myelin sheaths in the peripheral nervous system (PNS), and prominent central chromatolysis of the spinal anterior horn cells. The predominant process of the peripheral neuropathy appeared to be axonal degeneration. Biochemical analysis showed a marked increase of delta-aminolevulinic acid (ALA), porphobilinogen, uroporphyrin, and coproporphyrin in the urine, and an increase of coproporphyrin and protoporphyrin in the stools and blood. In the analysis of the enzymatic activities of the liver and bone narrow, the activity of ALA synthetase (ALA-S) was markedly increased, and the activities of both uroporphyrinogen I synthetase (URO-S) and ferrochelatase were decreased. It was characteristic in this case that the enzymatic abnormalities found in both acute intermittent porphyria (AIP) and variegate porphyria (VP) coexisted. Biochemical analysis of the sciatic nerve showed an increase of ALA-S activity and a decrease of both URO-S and ALA dehydrase activities. This was the first report that indicated the presence of abnormal activities of the heme biosynthetic enzymes in the peripheral nerves of porphyric patients. The possibility was discussed that these enzymatic abnormalities of the heme biosynthesis in the peripheral nerve itself might be strongly related to the pathogenesis of the porphyric neuropathy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00695599
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  • 3
    Electronic Resource
    Electronic Resource
    The increase of thiobarbituric acid reacting substances in rats with experimental chronic hypoxia (1982)
    Springer
    Cellular and molecular life sciences 38 (1982), S. 312-313 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Feeding under conditions of reduced oxygen supply prompted an increase in serum, arterial and brain tissue levels of thiobarbituric acid (TBA)-reacting substances. These observations indicated the possibility that hypoxia might be one of the factors predisposing to the accumulation of lipid peroxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01949361
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  • 4
    Electronic Resource
    Electronic Resource
    Immunopetentiators and the protection they give against carbon tetrachloride hepatotoxicity (1982)
    Springer
    Cellular and molecular life sciences 38 (1982), S. 501-502 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Immunopotentiators such as BCG, levamisole, PS-K and OK-432 prevent carbon tetrachloride (CCl4) hepatotoxicity, and in spite of exposure to CCl4 the liver tissue levels of thiobarbituric acid (TBA) reactive substances were not increased in rats pretreated with such immunopotentiators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01952661
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  • 5
    Electronic Resource
    Electronic Resource
    High-power (2.2 W) cw operation of (111)-oriented GaAs/AlGaAs single-quantum-well lasers prepared by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2764-2766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power (2.2 W) cw operation has been achieved in a (111)-oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single-quantum-well laser with the 100-μm wide stripe geometry. High differential quantum efficiency of 81% has been obtained up to ∼1.2 W, and high total power-conversion efficiency of 46% has been achieved at 1.5 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341624
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  • 6
    Electronic Resource
    Electronic Resource
    Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 297-302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of polarization-dependent gain-current characteristics have been carried out on (111)- and (100)-oriented GaAs/AlGaAs single-quantum-well lasers by using Hakki and Paoli's method. Polarization-dependent gain-current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higher-order subbands. Experimental results of polarization-dependent spontaneous emission are also presented. The simple selection rule and the effective-mass theories do not quantitatively account for the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341426
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  • 7
    Electronic Resource
    Electronic Resource
    Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 339-341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density Jth of (111) oriented lasers does not change with the well width Lz in the range of Lz=30–100 A(ring), which corresponds to an ideal extreme. The lowest Jth of 145 A/cm2 together with a high characteristic temperature T0 of 186 K in the threshold-temperature dependence has been achieved for an Lz of 40 A(ring) and a cavity length of 490 μm. The dependence of T0 on Lz showed that T0 is maximum at Lz∼60 A(ring) for both (111) and (100) oriented lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99457
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  • 8
    Electronic Resource
    Electronic Resource
    Energy-band structure of (AlAs)(GaAs) superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1729-1732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy-band structure of (AlAs) (GaAs) short-period superlattices (SLs) has been investigated by using photoluminescence and photoluminescence excitation spectroscopy. In the indirect transition region, both direct and indirect transitions are simultaneously observed and the band structure is elucidated. Indirect-direct crossover occurs in the region of 15–18 A(ring) GaAs thickness for SLs with 10-A(ring) AlAs thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339909
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  • 9
    Electronic Resource
    Electronic Resource
    High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4452-4454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity Al0.3Ga0.7As is grown by molecular beam epitaxy at a high substrate temperature using a superlattice buffer layer in order to trap residual impurities. The unintentionally doped layer is p type with p 〈 5×1014 cm−3. Photoluminescence spectra at 10 K showed the strong bound-exciton emission to be 3.8 meV wide and extremely weak emission due to residual C and Si. Photoluminescence spectra of successively grown single-quantum wells with different widths demonstrate that residual C and Si are mainly trapped at the interface of the first-grown well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336277
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  • 10
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99861
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