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  • 1990-1994  (65)
  • 1985-1989  (37)
  • 1975-1979  (15)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 1972-1977 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1979-1983 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This study reports the construction and working of a sintered diamond anvil high-pressure cell for performing electrical resistance measurements using a four-probe method at cryogenic temperatures. The apparatus has been designed to minimize the pressure shift during the cooling cycle from room temperature to 1.2 K. Pressure is calibrated using the pressure dependence of the superconducting transition temperature (Tc) of Bi to 50 GPa. The usefulness of the apparatus is demonstrated by electrical resistance and Tc measurements on Se and Zr up to 60 GPa.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3656-3660 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2532-2534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2719-2722 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The volume dependence of the x-ray Debye temperature in aluminum at high pressure up to 6 GPa was measured with high-energy synchrotron radiation at the National Laboratory for High Energy Physics. High-pressure high-temperature diffraction experiments were carried out by use of a multianvil press system with the energy-dispersive diffraction method. The Debye temperature was determined from the integrated intensity ratio at different temperatures. In order to avoid the intrinsic anharmonic effects and the influence of the energy shift for the Bragg diffraction due to the thermal expansion, constant volume was maintained in a sample by controlling the pressure at elevated temperatures. The interpolated values of the Debye temperature and the Grüneisen parameter of the atmospheric volume were θD0 =367 K and γ0 =3.0, respectively. Excellent agreement was found upon comparison with the published results of conventional experiments.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparative photoluminescence and excitation spectra of ZnSe/GaAs epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE) show likewise features in the exciton energy regime. Two strain-split components of the free exciton are observed, as well as characteristic sets of transitions from or into ground and excited states of acceptor- and donor-bound excitons. However, all respective lines are shifted to lower energies in the HWE samples, due to the increased thermally induced strain as a consequence of the substrate temperatures being enhanced compared to the MBE growth. Whereas the dominant donors are of the same nature in both kinds of samples, specific acceptor centers are incorporated in the HWE films. Although the MBE-grown layers are of superior quality, it is shown that HWE under optimized growth conditions is a cheap and useful alternative to obtain ZnSe epilayers of reliable properties.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 334-338 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pd multilayered films exhibit large perpendicular magnetic anisotropy and have attracted attention as new materials for recording media and for other applications. The coercivity (Hc), however, is small in as-sputtered films. We have found that Hc increased markedly with the atmospheric annealing at 300 °C to 2 kOe, and studied the change in film structure and reason of the increase in Hc with the annealing. The rf magnetron sputtering method was employed in fabricating the films. Film structure changes were observed by x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, energy dispersive x-ray spectrography, and atomic force microscopy. The increase in Hc was observed only in the atmospheric annealing, and not in the vacuum-annealing. The internal structure of films after the atmospheric annealing at 300 °C consisted of columnar parts that had the multilayered structure that undertook vertical magnetization and column boundaries being surrounded by Co oxides. As a consequence, domain wall binding occurs in the segregated areas of the oxides in the column boundaries, thereby increasing Hc.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistance ρc of non-alloyed ohmic metals (Mo/Au and WSix) to p-type GaAs is evaluated by transmission line method (TLM) patterns for various doping concentrations from 8×1018 to 1021 cm−3. The obtained specific contact resistance ρc, less than 10−8 Ω cm2, to metalorganic molecular beam epitaxy grown C-doped ( 1021 cm−3) GaAs is the lowest reported value. From the application point of view for the emitter electrodes of PNp type (two-dimensional electron gas base) heterojunction bipolar transistors, the specific contact resistance of a refractory metal, or the sputter-deposited WSix (x=0.45), is also studied. By reducing the growth temperature of molecular beam epitaxy from 600 to 450 °C and enhancing the As4/Ga flux ratio to 15, a nondiffusive heavily Be doped (1020 cm−3) GaAs is obtained. The specific contact resistance of the WSix to this sample is less than 10−6 Ω cm2. The obtained specific contact resistance can be well explained by a simple modeling based on the tunneling transport of light holes. Secondary ion mass spectroscopy analysis of the depth profile under heat acceleration shows a small diffusion of dopants for Be doped (1020 cm−3) GaAs and C-doped (1021 cm−3) GaAs. In addition, the specific contact resistance ρcISO of the isoheterojunction (p+GaAs/p+AlxGa1−xAs) is also evaluated by TLM patterns.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The loss parameters of the ducts in the Photon Factory (PF) storage ring were evaluated using the wire method and the code tbci. Both the measurement and the calculation were done for different bunch length σ ranging from 25 to 80 ps. The ring impedance was estimated to be ||Z/n||=3.19 Ω using the broadband impedance model. The measurements in frequency domain were also carried out to investigate the resonances of some duct components such as the gate valves without rf shield and the flange gaps. The results are presented.
    Type of Medium: Electronic Resource
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