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  • 1985-1989  (10)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 332-333 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: London penetration depth λL was calculated for superconductors having lifetime broadened density of states. With the increase of gap states, λL increases and the temperature dependence deviates from the ordinary form. The model gives a T2 dependence of λL in the case of weak-coupling limit of the Bardeen–Cooper–Schrieffer theory. The results are discussed referring to some experimental results of magnetic field penetration depth of oxide superconductors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2232-2234 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The orientation of YBa2Cu3O7−x thin films grown on (110) planes of SrTiO3 by activated reactive evaporation was investigated by means of reflection high-energy electron diffraction. The orientation of the films depended on the substrate temperature. The films with (110) planes parallel to the substrate surface grew in a narrow range of substrate temperatures around 530 °C, while the films with (103) planes parallel to the surface grew at temperatures above 600 °C. The change of the epitaxial orientation with the substrate temperature is discussed in terms of the temperature dependence of the lattice mismatch between YBa2Cu3O7−x and SrTiO3.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3168-3172 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of various iron oxides including FeO, Fe3 O4 , and α-Fe2 O3 were formed on the α-Al2 O3 (0001) surface by a reactive vapor deposition method and characterized by x-ray diffraction and conversion electron Mössbauer spectroscopy (CEMS). The formation range for each phase was determined as a function of the substrate temperature (Ts ) and oxygen partial pressure (PO2 ). Typically, the deposition of (111)-oriented epitaxial magnetite films could be performed at low temperatures of Ts =523∼623 K and PO2 =1.0–5.0×10−4 Torr. Good stoichiometry of the as-grown films were confirmed by CEMS, and the Verwey transition was clearly detected by measurements of resistivity and CEMS down to 77 K. However, the large lattice mismatch between the substrate and Fe3 O4 resulted in a columnar particle growth. The initially grown phase on such a mismatched substrate was specifically characterized by depositing the Mössbauer active isotope, 57 Fe, only at the deepest layers. On the other hand, by depositing 57 Fe only in the topmost layers, surface layers of well-crystallized films have been found to be rather stable against oxidation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 206-214 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new superlattice composed of semiconducting PbSe and SnSe has been grown epitaxially on cleaved NaCl substrates by the vapor deposition method. The samples were characterized by x-ray diffraction and cross-sectional high-resolution transmission electron microscopy. Two materials have different crystal structures; PbSe has the cubic NaCl-type structure, whereas SnSe has the orthorhombic SnS-type structure, which is a distorted NaCl-type structure. The lattice mismatch between them is quite large, about 3%, and their growth planes have different symmetries. Therefore, this superlattice should not be classified as an ordinary superlattice like the GaAs-AlAs system, but as a so-called strained-layer superlattice. As a result of the structural analyses, it has been found that the samples have an ideal structure whose compositional modulation can be described by the step model with no mixed layers at the interface. In addition, we have observed a change of crystal symmetry in the PbSe layers: PbSe adopts the SnS-type structure when the thickness is less than about 30 A(ring), for coherency strain, but it relaxes back to the NaCl-type structure, with loss of the coherency, when the thickness is larger.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 205-206 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction measurements were made on artificial superlattices of CoO-NiO, (CoO)m(NiO)n×l prepared on the (0001) surface of α-Al2O3. (111) layers of CoO and NiO, each less than 2 nm thick (2≤m,n≤8), were stacked alternatively to a total thickness of less than 70 nm (m+n≤15,l≤25). A well-defined magnetic Bragg peak indexed as (1/2 1/2 1/2) was observed for all the samples, and a magnetic structure of type FCC2 with the spin axis lying in the (111) planes grown was suggested. The temperature dependence of the magnetic peak intensity revealed a sharp, single magnetic transition. The Néel temperature was found to vary as a linear function of n/(m+n).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2689-2691 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7−x (YBCO) or ErBa2Cu3O7−x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 41 (1985), S. 27-32 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 23 (1988), S. 2093-2101 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microstructure and indentation response of pressureless-sintered α- and β-SiC were studied using a high-resolution electron microscope and analytical electron microscopy. The materials were manufactured with boron and carbon as sintering aids. It was found that the overall porosity of the materials was very low but a large number of carbon inclusions were present. X-ray diffraction revealed the fabricated β-SiC material was of the same 3C polytype as the initial starting powder; however, electron microscope observations indicated that the material contained a high density of faulting of the α-forms. High-resolution imaging of grain boundaries in these materials indicated that the boundaries were very clean, and when they contained an amorphous intergranular film it was at most 0.5 to 1 nm thick. The presence of boron was not detected. Deformation due to identation took several forms. Firstly, radial cracks extending from the corners of the indent suffered little hindrance from the matrix microstructure, such that transgranular fracture was the dominant mode. Secondly, the deformation zone beneath the indentations showed copious lattice microcracks with some preferred orientation during crack formation and propagation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 23 (1988), S. 3413-3419 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The sintering behaviours of four kinds of Si3N4 powders were investigated by dilatometry in 10 atm N2 at 1890, 1930 and 2050° C. The sinterabilities of powders were compared and discussed in relation to the powder characteristics. A large size distribution in the powder accelerated grain and pore growth at 〈1800° C, which resulted in the inhibition of further densification at 〉1800° C. The presence of carbon in a powder prevented densification. A powder with a uniform grain size kept the microstructure of the sintered material uniform during sintering at 〈1800° C and gave a high degree of shrinkage at 〉1800° C. Densification at 〉1800° C was accompanied by the dissolution of equi-axial β-Si3N4 grains and reprecipitation as elongated β-Si3N4 grains from the oxynitride liquid. The relation between the densification and microstructure is discussed in terms of the relative rates of densification and grain growth.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Phasenbeziehungen und Sauerstoff-Nichtstöchiometrie der perowskitartigen Verbindung SrCoOx (2,29 〈 x 〈 2,80)Strontiumcobaltate der Zusammensetzung SrCoO2,29 bis SrCoO2,80 sind unter verschiedenen Bedingungen, in bezug auf Den Sauerstoffdruck und Temperatur, dargestellt worden. Die bei höheren Temperaturen (über 800°C) dargestellten Proben kristallisierten, abhängig vom Sauerstoffdefizit, im Brownmillerit- oder Perowskit-Typ. Eine Perowskit-Phase mit großem Sauerstoff-Defizit, SrCoO2,29, und eine Brownmillierit-feste-Lösung, SrCoOx (2,42 〈 x 〈 2,52) wurden beobachtet. Andererseits kristallisierten bei niedriger Temperatur (unter 800°C) geglühte Proben nicht in der 2H-Typ Struktur mit dem Sr:Co-Verhältnis von 1:1 sondern in der Cobaltdefizit-Phase, 2H-SrCo1-uOx (u ≍ 0,1) und Co3O4. Der sauerstoffreiche Perowskit SrCoO2,67-2,80 wurde durch Glühen der Brownmillerit-Phase unter hohem Sauerstoffdruck bei 300°C Erhalten. Die elektrische Leitfähigkeit von SrCoOx (2,29 〈 x 〈 2,80) und der Sauerstoff-Diffusionskoeffizient der Perowskit-Phase SrCoOx (x = 2,68, 2,75 und 2,80) wurden als Funktion Der Temperatur gemessen. SrCoO2,80 zeigte Den sehr hohen Diffusionskoeffizienten von 2,3 · 10-11 cm2 sec-1 bei 23°C.
    Notes: Strontium cobaltates in the composition range, SrCoO2.29-SrCoO2.80, have been prepared under various conditions with respect to the oxygen pressure and temperature. Samples prepared at high temperatures (above 800°C) crystallized in the brownmillerite or perovskite type Structure Depending on oxygen Deficiency. A perovskite phase having large oxygen Deficiency, SrCoO2.29, and a brownmillerite solid solution, SrCoOx (2.42 〈 x 〈 2.52), were observed. On the other hand, samples annealed at low temperatures (below 800°C) did not crystallize in 2H type Structure with Sr:Co ratio of 1:1 but in the cobalt Deficient phase, 2H-SrCo1-uOx (u ≍ 0.1) and Co3O4. The high oxygen content perovskite SrCoO2.67-2.80 was obtained by annealing the brown-millerite phase under high oxygen pressures at 300°C. The electrical conductivity of SrCoOx (2.29 〈 x 〈 2.80) and the oxygen diffusion coefficient of the perovskite phase SrCoOx (x = 2.68, 2.75 and 2.80) were measured as a function of temperature. SrCoO2.80 showed the very high diffusion coefficient of 2.3 × 10-11 cm2 sec-1 at 23°C.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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