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  • 1985-1989  (5)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1035-1038 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new high-stability scanning tunneling microscope (STM) has been developed. Its key design feature is the application of two, concentrically aligned, piezoelectric ceramic tubes, allowing x–y–z motion of the tungsten tip as well as sample mounting to be cast into a single compact unit. The construction is small, very rigid, and temperature compensated, yielding reduced sensitivity to mechanical and acoustic vibrations and temperature variations. Other advantages of this "thimble-size'' STM include easy sample mounting and, at a later stage, operation under UHV conditions with access to other surface-analysis (UHV) tools. At present, the microscope is operated in air, and its performance is tested by imaging a highly oriented pyrolytic graphite surface and a Si(111) surface on which a 100-A(ring)-thick Au layer has been deposited.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2530-2531 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A laser interferometric method is described by which the length-to-voltage sensitivity of piezoelectric elements, as used e.g., in scanning tunneling microscopes, can be calibrated. The method is based on measuring the optical frequency of a laser locked to a piezoelectrically tuned interferometer, relative to a stable reference. The high sensitivity of this technique allows the calibration to be carried out in the low-voltage regime.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3499-3507 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapping of ion-implanted deuterium (D) by irradiation defects and He bubbles in Mo was investigated through nuclear-reaction profiling of the D during linear ramping of temperature. Resulting data were analyzed using transport theory to obtain trap strengths. Nanometer-size He bubbles were found to trap the D with a binding enthalpy of 1.15±0.15 eV relative to the solution site, consistent with two independent predictions based, respectively, on effective-medium theory and thermodynamic analysis. Implantation damage trapped the D with three different binding enthalpies, 1.15, 1.03, and 0.80 eV, attributed, respectively, to vacancy clusters, monovacancies with low D occupancy, and monovacancies with high D occupancy. The two latter values are in good agreement with effective-medium theory.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1841-1850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum was ion implanted with deuterium (D) and then subjected to linear temperature ramping, and the resulting D redistributions were monitored using the ion-induced nuclear reaction D(3He, p)4He. Data from such experiments were analyzed in terms of various immobilization processes, utilizing numerical solutions of the appropriate diffusion formalism. The identification of mechanisms was augmented by transmission electron microscopy. Irradiation defects believed to be of vacancy type were shown to trap the D with a binding enthalpy of 0.52±0.10 eV relative to solution sites, in excellent agreement with calculations based on effective medium theory. Stronger binding at the surface oxide was quantitatively described by assuming the formation of D2 molecules at the metal-oxide interface. At higher implanted concentrations the immobilization of D by precipitation of D2 bubbles was observed, and the subsequent release from these bubbles at more elevated temperatures was described by diffusion theory. Small, high-pressure He bubbles formed by ion implantation of He did not trap the D more strongly than the irradiation defects, in contrast to observations in a number of other metals, but consistent with predictions of effective medium theory for Al.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1788-1794 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The binding of multiple deuterium (D) atoms to vacancies in iron (Fe) is investigated both experimentally, by use of ion-beam techniques, and theoretically, by use of the effective-medium scheme. The experimental D-release stages are accounted for by trapping at vacancies with a binding enthalpy that depends on occupancy. It is found that for 1–2 D in a vacancy, the trap strength is 0.63 eV, whereas the binding enthalpy for 3–6 D in a vacancy is 0.43 eV. These results are in good agreement with predictions from the effective-medium theory.
    Type of Medium: Electronic Resource
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