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  • 1985-1989  (3)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2806-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping Se are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337061
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Proximity gettering with mega-electron-volt carbon and oxygen implantations (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1023-1025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm−2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99233
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Gettering of gold and copper with implanted carbon in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering effects of implanted carbon for Au and Cu are studied and compared with the gettering effects of implanted oxygen, nitrogen, BF2, neon, and argon. It is demonstrated that implanted carbon forms strong gettering centers in silicon which are an order of magnitude more effective than implanted oxygen. The amount of gettered Au by implanted carbon is found to be approximately linear with dose in the range from 1015 to 1016 cm−2 and no thermal instability is observed with annealing up to 12 h at 1000 °C. It is found that the gettering effect of carbon is reduced by the addition of oxygen. This indicates that the strong gettering effect of carbon is not due to carbon-enhanced oxygen precipitation but a phenomenon of its own.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99263
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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