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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Formation of an interfacial AlN layer in an Al/Si3N4 thin-film system (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 901-903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of an interfacial AlN layer was observed in an Al/Si3 N4 thin-film system immediately after electron beam deposition of Al, employing Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. Heat treatments up to 600 °C resulted in growth of this layer. The Si liberated by the direct reaction between Al and Si3 N4 was found to crystallize into small islands of peculiar fractal-like shape. The AlN layer acted as a diffusion barrier for diffusion of Al into Si3 N4 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101418
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1186-1188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of rapid thermal annealing (RTA) at 800, 1000, and 1200 °C on the Ni/Si3N4/Si system has been studied employing electron microscopy, Auger electron spectroscopy, and x-ray diffraction analysis. Formation of NiSi or NiSi2 silicides on the Ni/Si3N4 interface and of NiSi2 silicide on the Si3N4/Si interface was observed after RTA. This was a result of the diffusion of Si into deposited 250-nm-thick Ni layer and the diffusion of Ni through 140-nm-thick amorphous Si3N4 layer into the Si substrate. The diffusion coefficient of Ni in amorphous Si3N4 was estimated to be D(approximately-equal-to)103 exp(−3.2 eV/kT), cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100665
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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